Mid-infrared GaSb-based lasers with type-I heterointerfaces

D. V. Donetsky; R. U. Martinelli; G. L. Belenky

doi:10.1142/S0129156402001903

Mid-infrared GaSb-based lasers with type-I heterointerfaces

D. V. Donetsky
, R. U. Martinelli
, G. L. Belenky

Electrical Engineering

Sarnoff Corporation
Stony Brook University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The design of room-temperature, InGaAsSb/AlGaAsSb diode lasers has evolved from the first double-heterojunction lasers described in 1980 that operated in the pulsed-current mode to present-day continuous-wave (CW), high-power, quantum-well diode lasers. We discuss in detail recent results from type-I-heterostructure, GaSb-based CW room-temperature diode lasers. The devices operate within the wavelength range of 1.8 to 2.7 μm, providing output powers up to several Watts. We analyze the factors limiting device performance.

Original language	English
Pages (from-to)	1025-1038
Number of pages	14
Journal	International Journal of High Speed Electronics and Systems
Volume	12
Issue number	4
DOIs	https://doi.org/10.1142/S0129156402001903
State	Published - Dec 2002

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abstract = "The design of room-temperature, InGaAsSb/AlGaAsSb diode lasers has evolved from the first double-heterojunction lasers described in 1980 that operated in the pulsed-current mode to present-day continuous-wave (CW), high-power, quantum-well diode lasers. We discuss in detail recent results from type-I-heterostructure, GaSb-based CW room-temperature diode lasers. The devices operate within the wavelength range of 1.8 to 2.7 μm, providing output powers up to several Watts. We analyze the factors limiting device performance.",

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N2 - The design of room-temperature, InGaAsSb/AlGaAsSb diode lasers has evolved from the first double-heterojunction lasers described in 1980 that operated in the pulsed-current mode to present-day continuous-wave (CW), high-power, quantum-well diode lasers. We discuss in detail recent results from type-I-heterostructure, GaSb-based CW room-temperature diode lasers. The devices operate within the wavelength range of 1.8 to 2.7 μm, providing output powers up to several Watts. We analyze the factors limiting device performance.

AB - The design of room-temperature, InGaAsSb/AlGaAsSb diode lasers has evolved from the first double-heterojunction lasers described in 1980 that operated in the pulsed-current mode to present-day continuous-wave (CW), high-power, quantum-well diode lasers. We discuss in detail recent results from type-I-heterostructure, GaSb-based CW room-temperature diode lasers. The devices operate within the wavelength range of 1.8 to 2.7 μm, providing output powers up to several Watts. We analyze the factors limiting device performance.

UR - https://www.scopus.com/pages/publications/1542684262

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ER -

Mid-infrared GaSb-based lasers with type-I heterointerfaces

Abstract

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