Mid-infrared photoluminescence from structures with InAs/GaSb type II quantum wells

A. V. Selivanov; I. S. Makhov; V. Yu Panevin; A. N. Sofronov; D. A. Firsov; L. E. Vorobjev; L. Shterengas

doi:10.1088/1742-6596/643/1/012078

Mid-infrared photoluminescence from structures with InAs/GaSb type II quantum wells

A. V. Selivanov
, I. S. Makhov
, V. Yu Panevin
, A. N. Sofronov
, D. A. Firsov
, L. E. Vorobjev
, L. Shterengas

Electrical Engineering

Peter the Great St. Petersburg Polytechnic University

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

The results of experimental investigations of mid-infrared interband photoluminescence spectra from quantum well nanostructures based on InAs/GaSb/Al_0.35Ga_0.65As_0.03Sb_0.97 type II quantum wells in the wide temperature range from 10 K to the room temperature are presented. The photoluminescence line spectral positions are compared with the effective quantum well bandgap values obtained from the results of calculations of electron and hole energy states in quantum well. Analysis of the temperature dependence of the interband emission intensity allows to assume the presence of the traps near the middle of the effective energy gap. It is found that interband radiative recombination rate and nonradiative Shockley-Read-Hall rate are comparable.

Original language	English
Article number	012078
Journal	Journal of Physics: Conference Series
Volume	643
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/643/1/012078
State	Published - Nov 2 2015
Event	2nd International School and Conference Saint-Petersburg OPEN on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2015 - St. Petersburg, Russian Federation Duration: Apr 6 2015 → Apr 8 2015

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10.1088/1742-6596/643/1/012078

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title = "Mid-infrared photoluminescence from structures with InAs/GaSb type II quantum wells",

abstract = "The results of experimental investigations of mid-infrared interband photoluminescence spectra from quantum well nanostructures based on InAs/GaSb/Al0.35Ga0.65As0.03Sb0.97 type II quantum wells in the wide temperature range from 10 K to the room temperature are presented. The photoluminescence line spectral positions are compared with the effective quantum well bandgap values obtained from the results of calculations of electron and hole energy states in quantum well. Analysis of the temperature dependence of the interband emission intensity allows to assume the presence of the traps near the middle of the effective energy gap. It is found that interband radiative recombination rate and nonradiative Shockley-Read-Hall rate are comparable.",

author = "Selivanov, \{A. V.\} and Makhov, \{I. S.\} and Panevin, \{V. Yu\} and Sofronov, \{A. N.\} and Firsov, \{D. A.\} and Vorobjev, \{L. E.\} and L. Shterengas",

year = "2015",

month = nov,

day = "2",

doi = "10.1088/1742-6596/643/1/012078",

language = "English",

volume = "643",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

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note = "2nd International School and Conference Saint-Petersburg OPEN on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2015 ; Conference date: 06-04-2015 Through 08-04-2015",

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TY - JOUR

T1 - Mid-infrared photoluminescence from structures with InAs/GaSb type II quantum wells

AU - Selivanov, A. V.

AU - Makhov, I. S.

AU - Panevin, V. Yu

AU - Sofronov, A. N.

AU - Firsov, D. A.

AU - Vorobjev, L. E.

AU - Shterengas, L.

PY - 2015/11/2

Y1 - 2015/11/2

N2 - The results of experimental investigations of mid-infrared interband photoluminescence spectra from quantum well nanostructures based on InAs/GaSb/Al0.35Ga0.65As0.03Sb0.97 type II quantum wells in the wide temperature range from 10 K to the room temperature are presented. The photoluminescence line spectral positions are compared with the effective quantum well bandgap values obtained from the results of calculations of electron and hole energy states in quantum well. Analysis of the temperature dependence of the interband emission intensity allows to assume the presence of the traps near the middle of the effective energy gap. It is found that interband radiative recombination rate and nonradiative Shockley-Read-Hall rate are comparable.

AB - The results of experimental investigations of mid-infrared interband photoluminescence spectra from quantum well nanostructures based on InAs/GaSb/Al0.35Ga0.65As0.03Sb0.97 type II quantum wells in the wide temperature range from 10 K to the room temperature are presented. The photoluminescence line spectral positions are compared with the effective quantum well bandgap values obtained from the results of calculations of electron and hole energy states in quantum well. Analysis of the temperature dependence of the interband emission intensity allows to assume the presence of the traps near the middle of the effective energy gap. It is found that interband radiative recombination rate and nonradiative Shockley-Read-Hall rate are comparable.

UR - https://www.scopus.com/pages/publications/84952924555

U2 - 10.1088/1742-6596/643/1/012078

DO - 10.1088/1742-6596/643/1/012078

M3 - Conference article

AN - SCOPUS:84952924555

SN - 1742-6588

VL - 643

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012078

T2 - 2nd International School and Conference Saint-Petersburg OPEN on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2015

Y2 - 6 April 2015 through 8 April 2015

ER -

Mid-infrared photoluminescence from structures with InAs/GaSb type II quantum wells

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