Mid-IR room temperature operated GaSb-based lasers and laser arrays

G. Belenky; J. G. Kim; L. Shterengas; R. U. Martinelli

Mid-IR room temperature operated GaSb-based lasers and laser arrays

G. Belenky
, J. G. Kim
, L. Shterengas
, R. U. Martinelli

Electrical Engineering

Stony Brook University
Sarnoff Corporation

Research output: Contribution to journal › Conference article › peer-review

Abstract

Technology of GaSb-based type-I quantum-well lasers is considered. The role of quantum-well strain in determining device injection efficiency, differential gain and contribution of Auger recombination to threshold current is discussed.

Original language	English
Pages (from-to)	553-554
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2
State	Published - 2004
Event	2004 IEEE LEOS Annual Meeting Conference Proceedings, LEOS 2004 - Rio Grande, Puerto Rico Duration: Nov 7 2004 → Nov 11 2004

Cite this

@article{9f1021b3304d4827b2aa351a25b8f4e5,

title = "Mid-IR room temperature operated GaSb-based lasers and laser arrays",

abstract = "Technology of GaSb-based type-I quantum-well lasers is considered. The role of quantum-well strain in determining device injection efficiency, differential gain and contribution of Auger recombination to threshold current is discussed.",

author = "G. Belenky and Kim, \{J. G.\} and L. Shterengas and Martinelli, \{R. U.\}",

year = "2004",

language = "English",

volume = "2",

pages = "553--554",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

note = "2004 IEEE LEOS Annual Meeting Conference Proceedings, LEOS 2004 ; Conference date: 07-11-2004 Through 11-11-2004",

}

TY - JOUR

T1 - Mid-IR room temperature operated GaSb-based lasers and laser arrays

AU - Belenky, G.

AU - Kim, J. G.

AU - Shterengas, L.

AU - Martinelli, R. U.

PY - 2004

Y1 - 2004

N2 - Technology of GaSb-based type-I quantum-well lasers is considered. The role of quantum-well strain in determining device injection efficiency, differential gain and contribution of Auger recombination to threshold current is discussed.

AB - Technology of GaSb-based type-I quantum-well lasers is considered. The role of quantum-well strain in determining device injection efficiency, differential gain and contribution of Auger recombination to threshold current is discussed.

UR - https://www.scopus.com/pages/publications/14344259605

M3 - Conference article

AN - SCOPUS:14344259605

SN - 1092-8081

VL - 2

SP - 553

EP - 554

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - 2004 IEEE LEOS Annual Meeting Conference Proceedings, LEOS 2004

Y2 - 7 November 2004 through 11 November 2004

ER -

Mid-IR room temperature operated GaSb-based lasers and laser arrays

Abstract

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