Minority carrier lifetime in type-2 InAs-GaSb strained-layer superlattices and bulk HgCdTe materials

Dmitry Donetsky; Gregory Belenky; Stefan Svensson; Sergei Suchalkin

doi:10.1063/1.3476352

Minority carrier lifetime in type-2 InAs-GaSb strained-layer superlattices and bulk HgCdTe materials

Dmitry Donetsky
, Gregory Belenky
, Stefan Svensson
, Sergei Suchalkin

Electrical Engineering

Stony Brook University
Power Photonic Corporation
U.S. Army Research Laboratory

Research output: Contribution to journal › Article › peer-review

137 Scopus citations

Abstract

Minority carrier lifetime, τ, in type-2 strained-layer superlattices (SLSs) and in long-wave Hg_0.78Cd_0.22Te (MCT) was measured by optical modulation response technique. It was shown that at 77 K radiative recombination can contribute to the measured τ values. The Shockley-Read-Hall (SRH) lifetimes were attained as 100 ns, 31 ns, and more than 1 μs for midwave infrared superlattices, long-wave infrared (LWIR) superlattices, and MCT correspondingly. The nature of the difference between the SRH lifetimes in LWIR superlattice and MCT is discussed.

Original language	English
Article number	052108
Journal	Applied Physics Letters
Volume	97
Issue number	5
DOIs	https://doi.org/10.1063/1.3476352
State	Published - Aug 2 2010

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title = "Minority carrier lifetime in type-2 InAs-GaSb strained-layer superlattices and bulk HgCdTe materials",

abstract = "Minority carrier lifetime, τ, in type-2 strained-layer superlattices (SLSs) and in long-wave Hg0.78Cd0.22Te (MCT) was measured by optical modulation response technique. It was shown that at 77 K radiative recombination can contribute to the measured τ values. The Shockley-Read-Hall (SRH) lifetimes were attained as 100 ns, 31 ns, and more than 1 μs for midwave infrared superlattices, long-wave infrared (LWIR) superlattices, and MCT correspondingly. The nature of the difference between the SRH lifetimes in LWIR superlattice and MCT is discussed.",

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AU - Donetsky, Dmitry

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AU - Svensson, Stefan

AU - Suchalkin, Sergei

PY - 2010/8/2

Y1 - 2010/8/2

N2 - Minority carrier lifetime, τ, in type-2 strained-layer superlattices (SLSs) and in long-wave Hg0.78Cd0.22Te (MCT) was measured by optical modulation response technique. It was shown that at 77 K radiative recombination can contribute to the measured τ values. The Shockley-Read-Hall (SRH) lifetimes were attained as 100 ns, 31 ns, and more than 1 μs for midwave infrared superlattices, long-wave infrared (LWIR) superlattices, and MCT correspondingly. The nature of the difference between the SRH lifetimes in LWIR superlattice and MCT is discussed.

AB - Minority carrier lifetime, τ, in type-2 strained-layer superlattices (SLSs) and in long-wave Hg0.78Cd0.22Te (MCT) was measured by optical modulation response technique. It was shown that at 77 K radiative recombination can contribute to the measured τ values. The Shockley-Read-Hall (SRH) lifetimes were attained as 100 ns, 31 ns, and more than 1 μs for midwave infrared superlattices, long-wave infrared (LWIR) superlattices, and MCT correspondingly. The nature of the difference between the SRH lifetimes in LWIR superlattice and MCT is discussed.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Minority carrier lifetime in type-2 InAs-GaSb strained-layer superlattices and bulk HgCdTe materials

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