Modeling of perimeter-gated silicon avalanche diodes fabricated in a standard single-well CMOS process

Akin Akturk; Marc Dandin; Neil Goldsman; Pamela Abshire

doi:10.1109/ISDRS.2009.5378222

Modeling of perimeter-gated silicon avalanche diodes fabricated in a standard single-well CMOS process

Akin Akturk
, Marc Dandin
, Neil Goldsman
, Pamela Abshire

Electrical Engineering

University of Maryland, College Park

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Original language	English
Title of host publication	2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs	https://doi.org/10.1109/ISDRS.2009.5378222
State	Published - 2009
Event	2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States Duration: Dec 9 2009 → Dec 11 2009

Publication series

Name	2009 International Semiconductor Device Research Symposium, ISDRS '09

Conference

Conference	2009 International Semiconductor Device Research Symposium, ISDRS '09
Country/Territory	United States
City	College Park, MD
Period	12/9/09 → 12/11/09

Access to Document

10.1109/ISDRS.2009.5378222

Cite this

@inproceedings{a26fbee0d854421eb78af20fc9d7e081,

title = "Modeling of perimeter-gated silicon avalanche diodes fabricated in a standard single-well CMOS process",

author = "Akin Akturk and Marc Dandin and Neil Goldsman and Pamela Abshire",

year = "2009",

doi = "10.1109/ISDRS.2009.5378222",

language = "English",

isbn = "9781424460304",

series = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

booktitle = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

note = "2009 International Semiconductor Device Research Symposium, ISDRS '09 ; Conference date: 09-12-2009 Through 11-12-2009",

}

Akturk, A, Dandin, M, Goldsman, N & Abshire, P 2009, Modeling of perimeter-gated silicon avalanche diodes fabricated in a standard single-well CMOS process. in 2009 International Semiconductor Device Research Symposium, ISDRS '09., 5378222, 2009 International Semiconductor Device Research Symposium, ISDRS '09, 2009 International Semiconductor Device Research Symposium, ISDRS '09, College Park, MD, United States, 12/9/09. https://doi.org/10.1109/ISDRS.2009.5378222

Modeling of perimeter-gated silicon avalanche diodes fabricated in a standard single-well CMOS process. / Akturk, Akin; Dandin, Marc; Goldsman, Neil et al.
2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009. 5378222 (2009 International Semiconductor Device Research Symposium, ISDRS '09).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Modeling of perimeter-gated silicon avalanche diodes fabricated in a standard single-well CMOS process

AU - Akturk, Akin

AU - Dandin, Marc

AU - Goldsman, Neil

AU - Abshire, Pamela

PY - 2009

Y1 - 2009

UR - https://www.scopus.com/pages/publications/77949405314

U2 - 10.1109/ISDRS.2009.5378222

DO - 10.1109/ISDRS.2009.5378222

M3 - Conference contribution

AN - SCOPUS:77949405314

SN - 9781424460304

T3 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

BT - 2009 International Semiconductor Device Research Symposium, ISDRS '09

T2 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

Y2 - 9 December 2009 through 11 December 2009

ER -

Modeling of perimeter-gated silicon avalanche diodes fabricated in a standard single-well CMOS process

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