Modelling radiation damage to pixel sensors in the ATLAS detector

The ATLAS collaboration

doi:10.1088/1748-0221/14/06/P06012

Modelling radiation damage to pixel sensors in the ATLAS detector

The ATLAS collaboration

Mohamed I University
Aix-Marseille Université
University of Oklahoma
University of Massachusetts
Azerbaijan National Academy of Sciences
Royal Holloway University of London
University of Toronto
University of Copenhagen
University of Sussex
Tel Aviv University
Technion-Israel Institute of Technology
Argonne National Laboratory
National Institute for Nuclear Physics
King's College London
Abdus Salam International Centre for Theoretical Physics
The University of Tokyo
Johannes Gutenberg University Mainz
IN2P3/CNRS
AGH University of Krakow
Northern Illinois University
Ludwig Maximilian University of Munich
Istanbul University
Bogazici University
Rutherford Appleton Laboratory
University of California at Santa Cruz
Université Clermont Auvergne
Radboud University Nijmegen
Alexandru Ioan Cuza University of Iaşi
Laboratório de Instrumentação e Física Experimental de Partículas
IFT-UAM/CSIC
University of Granada
NOVA University Lisbon
Joint Institute for Nuclear Research
University of Rome Tor Vergata
Kyoto University
Lund University
University of Geneva
P.N. Lebedev Physical Institute of the Russian Academy of Sciences
University of Bologna
University of Victoria BC
Universidad Nacional de La Plata
CERN
Horia Hulubei National Institute of Physics and Nuclear Engineering

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 10¹⁵ 1 MeV n_eq/cm², while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (≤ 10 1 MeV n_eq/cm²).

Original language	English
Article number	P06012
Journal	Journal of Instrumentation
Volume	14
Issue number	6
DOIs	https://doi.org/10.1088/1748-0221/14/06/P06012
State	Published - Jun 11 2019

Keywords

Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc)
Radiation-hard detectors
Solid state detectors

Access to Document

10.1088/1748-0221/14/06/P06012

Cite this

@article{2e7c9f8baede48458adae9ec4dd09322,

title = "Modelling radiation damage to pixel sensors in the ATLAS detector",

abstract = "Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 1015 1 MeV neq/cm2, while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (≤ 10 1 MeV neq/cm2).",

keywords = "Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc), Radiation-hard detectors, Solid state detectors",

author = "\{The ATLAS collaboration\} and M. Aaboud and G. Aad and B. Abbott and Abbott, \{D. C.\} and O. Abdinov and Abhayasinghe, \{D. K.\} and Abidi, \{S. H.\} and Abouzeid, \{O. S.\} and Abraham, \{N. L.\} and H. Abramowicz and H. Abreu and Y. Abulaiti and Acharya, \{B. S.\} and S. Adachi and L. Adam and \{Adam Bourdarios\}, C. and L. Adamczyk and L. Adamek and J. Adelman and M. Adersberger and A. Adiguzel and T. Adye and Affolder, \{A. A.\} and Y. Afik and C. Agapopoulou and Agaras, \{M. N.\} and A. Aggarwal and C. Agheorghiesei and Aguilar-Saavedra, \{J. A.\} and F. Ahmadov and G. Aielli and S. Akatsuka and {\AA}kesson, \{T. P.A.\} and E. Akilli and Akimov, \{A. V.\} and \{Al Khoury\}, K. and Alberghi, \{G. L.\} and J. Albert and \{Alconada Verzini\}, \{M. J.\} and S. Alderweireldt and M. Aleksa and Aleksandrov, \{I. N.\} and C. Alexa and H. Arnold and \{Da Via\}, C. and V. Dao and J. Hobbs and J. Jia and G. Piacquadio and D. Tsybychev",

note = "Publisher Copyright: {\textcopyright} 2019 CERN for the benefit of the ATLAS collaboration. Published by IOP Publishing Ltd on behalf of Sissa Medialab. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence.",

year = "2019",

month = jun,

day = "11",

doi = "10.1088/1748-0221/14/06/P06012",

language = "English",

volume = "14",

journal = "Journal of Instrumentation",

issn = "1748-0221",

number = "6",

}

TY - JOUR

T1 - Modelling radiation damage to pixel sensors in the ATLAS detector

AU - The ATLAS collaboration

AU - Aaboud, M.

AU - Aad, G.

AU - Abbott, B.

AU - Abbott, D. C.

AU - Abdinov, O.

AU - Abhayasinghe, D. K.

AU - Abidi, S. H.

AU - Abouzeid, O. S.

AU - Abraham, N. L.

AU - Abramowicz, H.

AU - Abreu, H.

AU - Abulaiti, Y.

AU - Acharya, B. S.

AU - Adachi, S.

AU - Adam, L.

AU - Adam Bourdarios, C.

AU - Adamczyk, L.

AU - Adamek, L.

AU - Adelman, J.

AU - Adersberger, M.

AU - Adiguzel, A.

AU - Adye, T.

AU - Affolder, A. A.

AU - Afik, Y.

AU - Agapopoulou, C.

AU - Agaras, M. N.

AU - Aggarwal, A.

AU - Agheorghiesei, C.

AU - Aguilar-Saavedra, J. A.

AU - Ahmadov, F.

AU - Aielli, G.

AU - Akatsuka, S.

AU - Åkesson, T. P.A.

AU - Akilli, E.

AU - Akimov, A. V.

AU - Al Khoury, K.

AU - Alberghi, G. L.

AU - Albert, J.

AU - Alconada Verzini, M. J.

AU - Alderweireldt, S.

AU - Aleksa, M.

AU - Aleksandrov, I. N.

AU - Alexa, C.

AU - Arnold, H.

AU - Da Via, C.

AU - Dao, V.

AU - Hobbs, J.

AU - Jia, J.

AU - Piacquadio, G.

AU - Tsybychev, D.

N1 - Publisher Copyright: © 2019 CERN for the benefit of the ATLAS collaboration. Published by IOP Publishing Ltd on behalf of Sissa Medialab. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence.

PY - 2019/6/11

Y1 - 2019/6/11

N2 - Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 1015 1 MeV neq/cm2, while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (≤ 10 1 MeV neq/cm2).

AB - Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 1015 1 MeV neq/cm2, while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (≤ 10 1 MeV neq/cm2).

KW - Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc)

KW - Radiation-hard detectors

KW - Solid state detectors

UR - https://www.scopus.com/pages/publications/85070359632

U2 - 10.1088/1748-0221/14/06/P06012

DO - 10.1088/1748-0221/14/06/P06012

M3 - Article

AN - SCOPUS:85070359632

SN - 1748-0221

VL - 14

JO - Journal of Instrumentation

JF - Journal of Instrumentation

IS - 6

M1 - P06012

ER -

Modelling radiation damage to pixel sensors in the ATLAS detector

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this