Molecular beam epitaxy control and photoluminescence properties of InAsBi

S. P. Svensson; H. Hier; W. L. Sarney; D. Donetsky; D. Wang; G. Belenky

doi:10.1116/1.3672023

Molecular beam epitaxy control and photoluminescence properties of InAsBi

S. P. Svensson
, H. Hier
, W. L. Sarney
, D. Donetsky
, D. Wang
, G. Belenky

Electrical Engineering

U.S. Army Research Laboratory
Stony Brook University

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

Thick InAsBi layers were grown for photoluminescence (PL) characterization. The As to In overpressure ratio was carefully characterized and adjusted to achieve Bi-droplet-free surfaces. A closed loop feedback system was used to maintain the As overpressure during a 5-h deposition sequence. Despite a high degree of control of the growth parameters, evidence for local phase separation was observed in the PL spectra.

Original language	English
Article number	02B109
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	30
Issue number	2
DOIs	https://doi.org/10.1116/1.3672023
State	Published - Mar 2012

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title = "Molecular beam epitaxy control and photoluminescence properties of InAsBi",

abstract = "Thick InAsBi layers were grown for photoluminescence (PL) characterization. The As to In overpressure ratio was carefully characterized and adjusted to achieve Bi-droplet-free surfaces. A closed loop feedback system was used to maintain the As overpressure during a 5-h deposition sequence. Despite a high degree of control of the growth parameters, evidence for local phase separation was observed in the PL spectra.",

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AU - Svensson, S. P.

AU - Hier, H.

AU - Sarney, W. L.

AU - Donetsky, D.

AU - Wang, D.

AU - Belenky, G.

PY - 2012/3

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N2 - Thick InAsBi layers were grown for photoluminescence (PL) characterization. The As to In overpressure ratio was carefully characterized and adjusted to achieve Bi-droplet-free surfaces. A closed loop feedback system was used to maintain the As overpressure during a 5-h deposition sequence. Despite a high degree of control of the growth parameters, evidence for local phase separation was observed in the PL spectra.

AB - Thick InAsBi layers were grown for photoluminescence (PL) characterization. The As to In overpressure ratio was carefully characterized and adjusted to achieve Bi-droplet-free surfaces. A closed loop feedback system was used to maintain the As overpressure during a 5-h deposition sequence. Despite a high degree of control of the growth parameters, evidence for local phase separation was observed in the PL spectra.

UR - https://www.scopus.com/pages/publications/84861631893

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DO - 10.1116/1.3672023

M3 - Article

AN - SCOPUS:84861631893

SN - 2166-2746

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JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

IS - 2

M1 - 02B109

ER -

Molecular beam epitaxy control and photoluminescence properties of InAsBi

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