@inproceedings{d462e868f5d445dc9606b7f914ed778f,
title = "Mosaicity and wafer bending in SiC wafers as measured by double and triple crystal X-ray rocking curve and peak position maps",
abstract = "Double and triple crystal rocking curve and peak position maps are constructed for a 4H-SiC wafer for the symmetric (0 0 0 8) reflection in the normal position, the same reflection for a sample rotated 90º, and an asymmetric (1 2 3 6) reflection for the wafer in the normal position. These measurements were corrected for the {\textquoteleft}wobble{\textquoteright} in the instrument by scanning a 4” (1 1 1) Si wafer and assuming that the Si wafer was perfect and attributing the variations in the measurements to instrumental error. The x-ray measurements are correlated with a cross polar image, etch pit density map, white beam transmission x-ray topograph, and a laser light scan.",
keywords = "High resolution x-ray diffraction, Peak position maps, Rocking curve maps",
author = "Kirchner, \{K. W.\} and Jones, \{K. A.\} and Derenge, \{M. A.\} and M. Dudley and A. Powell",
note = "Publisher Copyright: {\textcopyright} (2007) Trans Tech Publications, Switzerland.; 6th European Conference on Silicon Carbide and Related Materials, ECSCRM 20006 ; Conference date: 03-09-2006 Through 07-09-2006",
year = "2007",
doi = "10.4028/www.scientific.net/MSF.556-557.213",
language = "English",
isbn = "0878494421",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "213--218",
editor = "N. Wright and C.M. Johnson and K. Vassilevski and I. Nikitina and A. Horsfall",
booktitle = "Silicon Carbide and Related Materials 2006 - ECSCRM 2006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials",
}