MOVPE growth of Ga(As)SbN on GaSb substrates

J. Y.T. Huang; L. J. Mawst; S. Jha; T. F. Kuech; D. Wang; L. Shterengas; G. Belenky; J. R. Meyer; I. Vurgaftman

doi:10.1016/j.jcrysgro.2008.08.026

MOVPE growth of Ga(As)SbN on GaSb substrates

J. Y.T. Huang
, L. J. Mawst
, S. Jha
, T. F. Kuech
, D. Wang
, L. Shterengas
, G. Belenky
, J. R. Meyer
, I. Vurgaftman

Electrical Engineering

University of Wisconsin-Madison
Stony Brook University
Naval Research Laboratory

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

GaSb_1-yN_y and GaAs_1-y-zSb_y N_z alloys on GaSb substrates were grown by metalorganic vapor phase epitaxy (MOVPE) as potential materials for mid-infrared wavelength emission. Nitrogen incorporation was found to increase with the presence of As in GaAsSbN when compared with that of GaSbN. Low-temperature (LT) photoluminescence (PL) measurements indicated the co-addition of nitrogen and arsenic reduced the energy bandgap relative to that of GaSb. LT (16 K) PL emission near 2.25 μm was observed from GaAsSbN with an arsenic content of ∼10% and a nitrogen content of ∼0.08%.

Original language	English
Pages (from-to)	4839-4842
Number of pages	4
Journal	Journal of Crystal Growth
Volume	310
Issue number	23
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.08.026
State	Published - Nov 15 2008

Keywords

A3. Metalorganic chemical vapor deposition
B1. Antimonides
B1. Nitrides
B2. Semiconducting III-V materials

Access to Document

10.1016/j.jcrysgro.2008.08.026

Cite this

@article{b5db185519944798a462bd6743fb81e8,

title = "MOVPE growth of Ga(As)SbN on GaSb substrates",

abstract = "GaSb1-yNy and GaAs1-y-zSby Nz alloys on GaSb substrates were grown by metalorganic vapor phase epitaxy (MOVPE) as potential materials for mid-infrared wavelength emission. Nitrogen incorporation was found to increase with the presence of As in GaAsSbN when compared with that of GaSbN. Low-temperature (LT) photoluminescence (PL) measurements indicated the co-addition of nitrogen and arsenic reduced the energy bandgap relative to that of GaSb. LT (16 K) PL emission near 2.25 μm was observed from GaAsSbN with an arsenic content of ∼10\% and a nitrogen content of ∼0.08\%.",

keywords = "A3. Metalorganic chemical vapor deposition, B1. Antimonides, B1. Nitrides, B2. Semiconducting III-V materials",

author = "Huang, \{J. Y.T.\} and Mawst, \{L. J.\} and S. Jha and Kuech, \{T. F.\} and D. Wang and L. Shterengas and G. Belenky and Meyer, \{J. R.\} and I. Vurgaftman",

year = "2008",

month = nov,

day = "15",

doi = "10.1016/j.jcrysgro.2008.08.026",

language = "English",

volume = "310",

pages = "4839--4842",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

number = "23",

}

TY - JOUR

T1 - MOVPE growth of Ga(As)SbN on GaSb substrates

AU - Huang, J. Y.T.

AU - Mawst, L. J.

AU - Jha, S.

AU - Kuech, T. F.

AU - Wang, D.

AU - Shterengas, L.

AU - Belenky, G.

AU - Meyer, J. R.

AU - Vurgaftman, I.

PY - 2008/11/15

Y1 - 2008/11/15

N2 - GaSb1-yNy and GaAs1-y-zSby Nz alloys on GaSb substrates were grown by metalorganic vapor phase epitaxy (MOVPE) as potential materials for mid-infrared wavelength emission. Nitrogen incorporation was found to increase with the presence of As in GaAsSbN when compared with that of GaSbN. Low-temperature (LT) photoluminescence (PL) measurements indicated the co-addition of nitrogen and arsenic reduced the energy bandgap relative to that of GaSb. LT (16 K) PL emission near 2.25 μm was observed from GaAsSbN with an arsenic content of ∼10% and a nitrogen content of ∼0.08%.

AB - GaSb1-yNy and GaAs1-y-zSby Nz alloys on GaSb substrates were grown by metalorganic vapor phase epitaxy (MOVPE) as potential materials for mid-infrared wavelength emission. Nitrogen incorporation was found to increase with the presence of As in GaAsSbN when compared with that of GaSbN. Low-temperature (LT) photoluminescence (PL) measurements indicated the co-addition of nitrogen and arsenic reduced the energy bandgap relative to that of GaSb. LT (16 K) PL emission near 2.25 μm was observed from GaAsSbN with an arsenic content of ∼10% and a nitrogen content of ∼0.08%.

KW - A3. Metalorganic chemical vapor deposition

KW - B1. Antimonides

KW - B1. Nitrides

KW - B2. Semiconducting III-V materials

UR - https://www.scopus.com/pages/publications/56649108018

U2 - 10.1016/j.jcrysgro.2008.08.026

DO - 10.1016/j.jcrysgro.2008.08.026

M3 - Article

AN - SCOPUS:56649108018

SN - 0022-0248

VL - 310

SP - 4839

EP - 4842

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 23

ER -

MOVPE growth of Ga(As)SbN on GaSb substrates

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this