Multiplication of basal plane dislocations via interaction with c-axis threading dislocations in 4H-SiC

Yi Chen; Govindhan Dhanaraj; Michael Dudley; Hui Zhang; Ronghui Ma; Yevgeniy Shishkin; Stephen E. Saddow

doi:10.1557/proc-0911-b09-04

Multiplication of basal plane dislocations via interaction with c-axis threading dislocations in 4H-SiC

Yi Chen
, Govindhan Dhanaraj
, Michael Dudley
, Hui Zhang
, Ronghui Ma
, Yevgeniy Shishkin
, Stephen E. Saddow

Materials Science and Engineering

Stony Brook University
University of Maryland, Baltimore County
University of South Florida

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Scopus citations

Abstract

Silicon carbide (SiC) substrates with chemical vapor deposition (CVD) grown epilayers have been characterized by synchrotron white beam X-ray topography (SWBXT). Large numbers of circular basal plane dislocation loops (BPDs) were observed in the substrate which were anchored by threading screw dislocations (SDs). Threading edge dislocations (TEDs) are not observed to play an important role in the multiplication of BPDs. A SD-assisted "conservative climb" model is proposed to explain the multiplication of BPDs during growth and/or post-growth processes. BPDs are shown to multiply on adjacent parallel basal planes via single SD-assisted as well as opposite sign SD-pair-assisted "conservative climb".

Original language	English
Title of host publication	Silicon Carbide 2006 - Materials, Processing and Devices
Publisher	Materials Research Society
Pages	151-156
Number of pages	6
ISBN (Print)	1558998721, 9781558998728
DOIs	https://doi.org/10.1557/proc-0911-b09-04
State	Published - 2006
Event	2006 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 18 2006 → Apr 20 2006

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	911
ISSN (Print)	0272-9172

Conference

Conference	2006 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	04/18/06 → 04/20/06

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10.1557/proc-0911-b09-04

Cite this

Chen, Y., Dhanaraj, G., Dudley, M., Zhang, H., Ma, R., Shishkin, Y., & Saddow, S. E. (2006). Multiplication of basal plane dislocations via interaction with c-axis threading dislocations in 4H-SiC. In Silicon Carbide 2006 - Materials, Processing and Devices (pp. 151-156). (Materials Research Society Symposium Proceedings; Vol. 911). Materials Research Society. https://doi.org/10.1557/proc-0911-b09-04

@inproceedings{61a43a90bb7a4634b6ae0fe2a0cf0634,

title = "Multiplication of basal plane dislocations via interaction with c-axis threading dislocations in 4H-SiC",

abstract = "Silicon carbide (SiC) substrates with chemical vapor deposition (CVD) grown epilayers have been characterized by synchrotron white beam X-ray topography (SWBXT). Large numbers of circular basal plane dislocation loops (BPDs) were observed in the substrate which were anchored by threading screw dislocations (SDs). Threading edge dislocations (TEDs) are not observed to play an important role in the multiplication of BPDs. A SD-assisted {"}conservative climb{"} model is proposed to explain the multiplication of BPDs during growth and/or post-growth processes. BPDs are shown to multiply on adjacent parallel basal planes via single SD-assisted as well as opposite sign SD-pair-assisted {"}conservative climb{"}.",

author = "Yi Chen and Govindhan Dhanaraj and Michael Dudley and Hui Zhang and Ronghui Ma and Yevgeniy Shishkin and Saddow, \{Stephen E.\}",

year = "2006",

doi = "10.1557/proc-0911-b09-04",

language = "English",

isbn = "1558998721",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "151--156",

booktitle = "Silicon Carbide 2006 - Materials, Processing and Devices",

note = "2006 MRS Spring Meeting ; Conference date: 18-04-2006 Through 20-04-2006",

}

Chen, Y, Dhanaraj, G, Dudley, M, Zhang, H, Ma, R, Shishkin, Y & Saddow, SE 2006, Multiplication of basal plane dislocations via interaction with c-axis threading dislocations in 4H-SiC. in Silicon Carbide 2006 - Materials, Processing and Devices. Materials Research Society Symposium Proceedings, vol. 911, Materials Research Society, pp. 151-156, 2006 MRS Spring Meeting, San Francisco, CA, United States, 04/18/06. https://doi.org/10.1557/proc-0911-b09-04

Multiplication of basal plane dislocations via interaction with c-axis threading dislocations in 4H-SiC. / Chen, Yi; Dhanaraj, Govindhan; Dudley, Michael et al.
Silicon Carbide 2006 - Materials, Processing and Devices. Materials Research Society, 2006. p. 151-156 (Materials Research Society Symposium Proceedings; Vol. 911).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Multiplication of basal plane dislocations via interaction with c-axis threading dislocations in 4H-SiC

AU - Chen, Yi

AU - Dhanaraj, Govindhan

AU - Dudley, Michael

AU - Zhang, Hui

AU - Ma, Ronghui

AU - Shishkin, Yevgeniy

AU - Saddow, Stephen E.

PY - 2006

Y1 - 2006

N2 - Silicon carbide (SiC) substrates with chemical vapor deposition (CVD) grown epilayers have been characterized by synchrotron white beam X-ray topography (SWBXT). Large numbers of circular basal plane dislocation loops (BPDs) were observed in the substrate which were anchored by threading screw dislocations (SDs). Threading edge dislocations (TEDs) are not observed to play an important role in the multiplication of BPDs. A SD-assisted "conservative climb" model is proposed to explain the multiplication of BPDs during growth and/or post-growth processes. BPDs are shown to multiply on adjacent parallel basal planes via single SD-assisted as well as opposite sign SD-pair-assisted "conservative climb".

AB - Silicon carbide (SiC) substrates with chemical vapor deposition (CVD) grown epilayers have been characterized by synchrotron white beam X-ray topography (SWBXT). Large numbers of circular basal plane dislocation loops (BPDs) were observed in the substrate which were anchored by threading screw dislocations (SDs). Threading edge dislocations (TEDs) are not observed to play an important role in the multiplication of BPDs. A SD-assisted "conservative climb" model is proposed to explain the multiplication of BPDs during growth and/or post-growth processes. BPDs are shown to multiply on adjacent parallel basal planes via single SD-assisted as well as opposite sign SD-pair-assisted "conservative climb".

UR - https://www.scopus.com/pages/publications/33750331409

U2 - 10.1557/proc-0911-b09-04

DO - 10.1557/proc-0911-b09-04

M3 - Conference contribution

AN - SCOPUS:33750331409

SN - 1558998721

SN - 9781558998728

T3 - Materials Research Society Symposium Proceedings

SP - 151

EP - 156

BT - Silicon Carbide 2006 - Materials, Processing and Devices

PB - Materials Research Society

T2 - 2006 MRS Spring Meeting

Y2 - 18 April 2006 through 20 April 2006

ER -

Multiplication of basal plane dislocations via interaction with c-axis threading dislocations in 4H-SiC

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