Narrow Ridge λ 3-μm Cascade Diode Lasers with Output Power above 100 mW at Room Temperature

Rui Liang; Takashi Hosoda; Leon Shterengas; Aaron Stein; Ming Lu; Gela Kipshidze; Gregory Belenky

doi:10.1109/LPT.2015.2464704

Narrow Ridge λ 3-μm Cascade Diode Lasers with Output Power above 100 mW at Room Temperature

Rui Liang
, Takashi Hosoda
, Leon Shterengas
, Aaron Stein
, Ming Lu
, Gela Kipshidze
, Gregory Belenky

Electrical Engineering

Stony Brook University
Brookhaven National Laboratory
JDS Uniphase

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Shallow narrow ridge two-stage cascade GaSb-based type-I quantum well diode lasers emitting at λ 3 μm were designed and fabricated. Efficient carrier recycling improved the device power conversion and slope efficiencies as compared with the standard multiple quantum well diode lasers. Devices generated more than 100 mW of continuous-wave output power in nearly diffraction limited beam at room temperature. Studies of the current dependence of the modal gain spectra confirmed increased tendency to lateral current spreading in cascade laser heterostructures as compared with the regular diode lasers.

Original language	English
Article number	7226801
Pages (from-to)	2425-2428
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	27
Issue number	23
DOIs	https://doi.org/10.1109/LPT.2015.2464704
State	Published - Dec 1 2015

Keywords

cascade lasers
GaSb
mid-infrared
semiconductor lasers

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@article{70a9f2a09c1742ba9908803e9b1b19b6,

title = "Narrow Ridge λ 3-μm Cascade Diode Lasers with Output Power above 100 mW at Room Temperature",

abstract = "Shallow narrow ridge two-stage cascade GaSb-based type-I quantum well diode lasers emitting at λ 3 μm were designed and fabricated. Efficient carrier recycling improved the device power conversion and slope efficiencies as compared with the standard multiple quantum well diode lasers. Devices generated more than 100 mW of continuous-wave output power in nearly diffraction limited beam at room temperature. Studies of the current dependence of the modal gain spectra confirmed increased tendency to lateral current spreading in cascade laser heterostructures as compared with the regular diode lasers.",

keywords = "cascade lasers, GaSb, mid-infrared, semiconductor lasers",

author = "Rui Liang and Takashi Hosoda and Leon Shterengas and Aaron Stein and Ming Lu and Gela Kipshidze and Gregory Belenky",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

year = "2015",

month = dec,

day = "1",

doi = "10.1109/LPT.2015.2464704",

language = "English",

volume = "27",

pages = "2425--2428",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

number = "23",

}

TY - JOUR

T1 - Narrow Ridge λ 3-μm Cascade Diode Lasers with Output Power above 100 mW at Room Temperature

AU - Liang, Rui

AU - Hosoda, Takashi

AU - Shterengas, Leon

AU - Stein, Aaron

AU - Lu, Ming

AU - Kipshidze, Gela

AU - Belenky, Gregory

PY - 2015/12/1

Y1 - 2015/12/1

N2 - Shallow narrow ridge two-stage cascade GaSb-based type-I quantum well diode lasers emitting at λ 3 μm were designed and fabricated. Efficient carrier recycling improved the device power conversion and slope efficiencies as compared with the standard multiple quantum well diode lasers. Devices generated more than 100 mW of continuous-wave output power in nearly diffraction limited beam at room temperature. Studies of the current dependence of the modal gain spectra confirmed increased tendency to lateral current spreading in cascade laser heterostructures as compared with the regular diode lasers.

AB - Shallow narrow ridge two-stage cascade GaSb-based type-I quantum well diode lasers emitting at λ 3 μm were designed and fabricated. Efficient carrier recycling improved the device power conversion and slope efficiencies as compared with the standard multiple quantum well diode lasers. Devices generated more than 100 mW of continuous-wave output power in nearly diffraction limited beam at room temperature. Studies of the current dependence of the modal gain spectra confirmed increased tendency to lateral current spreading in cascade laser heterostructures as compared with the regular diode lasers.

KW - cascade lasers

KW - GaSb

KW - mid-infrared

KW - semiconductor lasers

UR - https://www.scopus.com/pages/publications/84944030042

U2 - 10.1109/LPT.2015.2464704

DO - 10.1109/LPT.2015.2464704

M3 - Article

AN - SCOPUS:84944030042

SN - 1041-1135

VL - 27

SP - 2425

EP - 2428

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 23

M1 - 7226801

ER -

Narrow Ridge λ 3-μm Cascade Diode Lasers with Output Power above 100 mW at Room Temperature

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Keywords

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