Near band edge optical absorption and photoluminescence dynamics in bulk InAsN dilute-nitride materials

Dilute-nitride InAs bulk materials with up to 2.25% of nitrogen were grown by molecular beam epitaxy on InAs substrates. Photoluminescence (PL) and optical absorption measurements demonstrate a bandgap reduction by up to 150 meV with increasing nitrogen incorporation. Close correspondence of the energies of the photoluminescence peak and absorption edges indicate limited MossBurstein shift. Minority carrier lifetimes in the nanosecond range are measured using an ultra-fast PL up-conversion technique for the samples with up to 2% of nitrogen. Orders of magnitude advance of the carrier relaxation lifetimes as compared to GaSbN encourage development of the InAsN as a potential material for mid-IR detector applications.