New results for a novel oxygenated silicon material

C. Da Via'; S. J. Watts

doi:10.1016/S0168-583X(01)00878-3

New results for a novel oxygenated silicon material

C. Da Via'
, S. J. Watts

Physics and Astronomy

Brunel University London

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

High resistivity FZ silicon diodes have been processed in order to increase their oxygen dimer (O_2i) concentration. Deep level transient spectroscopy (DLTS) measurements have been performed after proton irradiation showing that the formation of the VO centre is suppressed. The substrates had a starting resistivity of 2-4 kΩ cm, with an oxygen concentration of 10¹⁵-10¹⁷ cm^-3. This new material has potential applications in very high radiation environments such as particle detectors in future particle physics experiments.

Original language	English
Pages (from-to)	111-115
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	186
Issue number	1-4
DOIs	https://doi.org/10.1016/S0168-583X(01)00878-3
State	Published - Jan 2002

Keywords

DLTS
Oxygen
Oxygen dimer
Silicon detector

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10.1016/S0168-583X(01)00878-3

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title = "New results for a novel oxygenated silicon material",

abstract = "High resistivity FZ silicon diodes have been processed in order to increase their oxygen dimer (O2i) concentration. Deep level transient spectroscopy (DLTS) measurements have been performed after proton irradiation showing that the formation of the VO centre is suppressed. The substrates had a starting resistivity of 2-4 kΩ cm, with an oxygen concentration of 1015-1017 cm-3. This new material has potential applications in very high radiation environments such as particle detectors in future particle physics experiments.",

keywords = "DLTS, Oxygen, Oxygen dimer, Silicon detector",

author = "\{Da Via'\}, C. and Watts, \{S. J.\}",

year = "2002",

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doi = "10.1016/S0168-583X(01)00878-3",

language = "English",

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pages = "111--115",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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T1 - New results for a novel oxygenated silicon material

AU - Da Via', C.

AU - Watts, S. J.

PY - 2002/1

Y1 - 2002/1

N2 - High resistivity FZ silicon diodes have been processed in order to increase their oxygen dimer (O2i) concentration. Deep level transient spectroscopy (DLTS) measurements have been performed after proton irradiation showing that the formation of the VO centre is suppressed. The substrates had a starting resistivity of 2-4 kΩ cm, with an oxygen concentration of 1015-1017 cm-3. This new material has potential applications in very high radiation environments such as particle detectors in future particle physics experiments.

AB - High resistivity FZ silicon diodes have been processed in order to increase their oxygen dimer (O2i) concentration. Deep level transient spectroscopy (DLTS) measurements have been performed after proton irradiation showing that the formation of the VO centre is suppressed. The substrates had a starting resistivity of 2-4 kΩ cm, with an oxygen concentration of 1015-1017 cm-3. This new material has potential applications in very high radiation environments such as particle detectors in future particle physics experiments.

KW - DLTS

KW - Oxygen

KW - Oxygen dimer

KW - Silicon detector

UR - https://www.scopus.com/pages/publications/0036134728

U2 - 10.1016/S0168-583X(01)00878-3

DO - 10.1016/S0168-583X(01)00878-3

M3 - Article

AN - SCOPUS:0036134728

SN - 0168-583X

VL - 186

SP - 111

EP - 115

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

New results for a novel oxygenated silicon material

Abstract

Keywords

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