Nonbolometric mechanism of far-infrared photoresponse in quantum Hall systems

N. G. Kalugin; Yu B. Vasilyev; S. D. Suchalkin; G. Nachtwei; B. E. Sagol; K. Eberl

doi:10.1016/S0921-4526(01)01367-9

Nonbolometric mechanism of far-infrared photoresponse in quantum Hall systems

N. G. Kalugin
, Yu B. Vasilyev
, S. D. Suchalkin
, G. Nachtwei
, B. E. Sagol
, K. Eberl

Electrical Engineering

Technical University of Braunschweig
Ioffe Physical Technical Institute
Max Planck Institute for Solid State Research

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We have performed time-resolved measurements of the far-infrared photoconductivity of the two-dimensional electron system (2DES) in GaAs/AlGaAs heterostructures in the integer quantum Hall regime (near filling factor ν = 2) by the application of a p-Ge laser radiation. We have found that the photoresponse (PR) signal has two components, a bolometric component with a decay time not longer than 1-2 μs, and a cyclotron resonance-related component of opposite polarity with a decay time of about 4-5 μs. We have observed a strong dependence of the PR signal on the filling factor, sample current and laser intensity. Surprisingly, we did not find a pronounced dependence of the PR decay times on these parameters and on the electron mobility, irrespective of the time constant of our setup.

Original language	English
Pages (from-to)	166-170
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	314
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4526(01)01367-9
State	Published - Mar 2002

Keywords

Photoconductive and photovoltaic effects
Quantum Hall effects
Time-resolved optical spectroscopies

Access to Document

10.1016/S0921-4526(01)01367-9

Cite this

@article{078d99ac2a1843a5a056e3a2ec12c19c,

title = "Nonbolometric mechanism of far-infrared photoresponse in quantum Hall systems",

abstract = "We have performed time-resolved measurements of the far-infrared photoconductivity of the two-dimensional electron system (2DES) in GaAs/AlGaAs heterostructures in the integer quantum Hall regime (near filling factor ν = 2) by the application of a p-Ge laser radiation. We have found that the photoresponse (PR) signal has two components, a bolometric component with a decay time not longer than 1-2 μs, and a cyclotron resonance-related component of opposite polarity with a decay time of about 4-5 μs. We have observed a strong dependence of the PR signal on the filling factor, sample current and laser intensity. Surprisingly, we did not find a pronounced dependence of the PR decay times on these parameters and on the electron mobility, irrespective of the time constant of our setup.",

keywords = "Photoconductive and photovoltaic effects, Quantum Hall effects, Time-resolved optical spectroscopies",

author = "Kalugin, \{N. G.\} and Vasilyev, \{Yu B.\} and Suchalkin, \{S. D.\} and G. Nachtwei and Sagol, \{B. E.\} and K. Eberl",

year = "2002",

month = mar,

doi = "10.1016/S0921-4526(01)01367-9",

language = "English",

volume = "314",

pages = "166--170",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

number = "1-4",

}

TY - JOUR

T1 - Nonbolometric mechanism of far-infrared photoresponse in quantum Hall systems

AU - Kalugin, N. G.

AU - Vasilyev, Yu B.

AU - Suchalkin, S. D.

AU - Nachtwei, G.

AU - Sagol, B. E.

AU - Eberl, K.

PY - 2002/3

Y1 - 2002/3

N2 - We have performed time-resolved measurements of the far-infrared photoconductivity of the two-dimensional electron system (2DES) in GaAs/AlGaAs heterostructures in the integer quantum Hall regime (near filling factor ν = 2) by the application of a p-Ge laser radiation. We have found that the photoresponse (PR) signal has two components, a bolometric component with a decay time not longer than 1-2 μs, and a cyclotron resonance-related component of opposite polarity with a decay time of about 4-5 μs. We have observed a strong dependence of the PR signal on the filling factor, sample current and laser intensity. Surprisingly, we did not find a pronounced dependence of the PR decay times on these parameters and on the electron mobility, irrespective of the time constant of our setup.

AB - We have performed time-resolved measurements of the far-infrared photoconductivity of the two-dimensional electron system (2DES) in GaAs/AlGaAs heterostructures in the integer quantum Hall regime (near filling factor ν = 2) by the application of a p-Ge laser radiation. We have found that the photoresponse (PR) signal has two components, a bolometric component with a decay time not longer than 1-2 μs, and a cyclotron resonance-related component of opposite polarity with a decay time of about 4-5 μs. We have observed a strong dependence of the PR signal on the filling factor, sample current and laser intensity. Surprisingly, we did not find a pronounced dependence of the PR decay times on these parameters and on the electron mobility, irrespective of the time constant of our setup.

KW - Photoconductive and photovoltaic effects

KW - Quantum Hall effects

KW - Time-resolved optical spectroscopies

UR - https://www.scopus.com/pages/publications/0036503535

U2 - 10.1016/S0921-4526(01)01367-9

DO - 10.1016/S0921-4526(01)01367-9

M3 - Article

AN - SCOPUS:0036503535

SN - 0921-4526

VL - 314

SP - 166

EP - 170

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

ER -

Nonbolometric mechanism of far-infrared photoresponse in quantum Hall systems

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this