Abstract
The possible device performance-limiting defects in SiC epilayers include crystallographic defects in the epilayer and surface morphological defects on the epi-surface. This study will present a nondestructive SiC defect characterization method, based on the principle of polarized light microscopy (PLM), that can perform rapid and in-depth defect evaluation on a wafer scale. The newly-developed PLM technique has been successfully expanded to characterize crystallographic defects and related surface morphological defects (growth pits) in SiC epi-films. Using AFM and PLM, various surface morphological defects on the SiC epilayer surface were revealed.
| Original language | English |
|---|---|
| Pages (from-to) | 601-604 |
| Number of pages | 4 |
| Journal | Materials Science Forum |
| Volume | 457-460 |
| Issue number | I |
| DOIs | |
| State | Published - 2004 |
| Event | Proceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, France Duration: Oct 5 2003 → Oct 10 2003 |
Keywords
- Characterization
- Defects
- Growth pit
- PLM
- SiC
- Silicon Carbide
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