Skip to main navigation Skip to search Skip to main content

Nonresonant nonlinear absorption in n-Ge, GaAs, and ZnSe in the long-wave infrared

  • Daniel Matteo
  • , Jeremy Pigeon
  • , Sergei Tochitsky
  • , Ilan Ben-Zvi
  • , Chan Joshi
  • University of California at Los Angeles
  • Stony Brook University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We measure nonlinear absorption in semiconductors using nanosecond and picosecond CO2 laser pulses. Absorption strength scales inversely with band gap energy. Effective absorption coefficients in n-Ge are unchanged over intensities from 0.1-2

Original languageEnglish
Title of host publicationFrontiers in Optics - Proceedings Frontiers in Optics / Laser Science, Part of Frontiers in Optics + Laser Science APS/DLS, FiO 2020
PublisherOptica Publishing Group (formerly OSA)
ISBN (Electronic)9781943580804
DOIs
StatePublished - Sep 14 2020
Event2020 Frontiers in Optics Conference, FiO 2020 - Washington, United States
Duration: Sep 14 2020Sep 17 2020

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

Conference2020 Frontiers in Optics Conference, FiO 2020
Country/TerritoryUnited States
CityWashington
Period09/14/2009/17/20

Fingerprint

Dive into the research topics of 'Nonresonant nonlinear absorption in n-Ge, GaAs, and ZnSe in the long-wave infrared'. Together they form a unique fingerprint.

Cite this