@inproceedings{05ac9682c17b42d383b5277843a2700d,
title = "Numerical model and experimental study on comparison of semiconductor pulsed power devices",
abstract = "The characteristics applied in pulsed power area for the power semiconductor devices of RSD(reversely switched dynistor), thyristor and IGBT are compared synthetically in this paper. By establishing the two-dimensional electro-thermal coupling models for the three types of devices, the turn-on performances of each one at low and high current density are discussed, separately. The results show that the special type device RSD always acquires the lowest turn-on voltage and power dissipation. This advantage is more obvious with the current density increase. The experimental results have approved the trend.",
keywords = "electro-thermal coupling models, IGBT, pulse power, RSD, thyristor",
author = "Lin Liang and Changdong Chen and Fang Luo",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 31st Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2016 ; Conference date: 20-03-2016 Through 24-03-2016",
year = "2016",
month = may,
day = "10",
doi = "10.1109/APEC.2016.7468287",
language = "English",
series = "Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "2981--2985",
booktitle = "2016 IEEE Applied Power Electronics Conference and Exposition, APEC 2016",
}