Observation by resonant tunneling of high-energy states in GaAs-Ga1-xAlxAs quantum wells

E. E. Mendez; E. Calleja; C. E.T.Gonçalves Da Silva; L. L. Chang; W. I. Wang

doi:10.1103/PhysRevB.33.7368

Observation by resonant tunneling of high-energy states in GaAs-Ga1-xAlxAs quantum wells

E. E. Mendez
, E. Calleja
, C. E.T.Gonçalves Da Silva
, L. L. Chang
, W. I. Wang

Physics and Astronomy

IBM

Research output: Contribution to journal › Article › peer-review

83 Scopus citations

Abstract

The current-voltage characteristics of Ga1-xAlxAs-GaAs-Ga1-xAlx As double-barrier devices show, in addition to resonant tunneling via quasibound states, well-defined structures corresponding to energies higher than the barrier height. These new features are interpreted as resonant tunneling through confined states in Ga1-xAlxAs, at the X point of the Brillouin zone.

Original language	English
Pages (from-to)	7368-7370
Number of pages	3
Journal	Physical Review B
Volume	33
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevB.33.7368
State	Published - 1986

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title = "Observation by resonant tunneling of high-energy states in GaAs-Ga1-xAlxAs quantum wells",

abstract = "The current-voltage characteristics of Ga1-xAlxAs-GaAs-Ga1-xAlx As double-barrier devices show, in addition to resonant tunneling via quasibound states, well-defined structures corresponding to energies higher than the barrier height. These new features are interpreted as resonant tunneling through confined states in Ga1-xAlxAs, at the X point of the Brillouin zone.",

author = "Mendez, \{E. E.\} and E. Calleja and \{Da Silva\}, \{C. E.T.Gon{\c c}alves\} and Chang, \{L. L.\} and Wang, \{W. I.\}",

year = "1986",

doi = "10.1103/PhysRevB.33.7368",

language = "English",

volume = "33",

pages = "7368--7370",

journal = "Physical Review B",

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T1 - Observation by resonant tunneling of high-energy states in GaAs-Ga1-xAlxAs quantum wells

AU - Mendez, E. E.

AU - Calleja, E.

AU - Da Silva, C. E.T.Gonçalves

AU - Chang, L. L.

AU - Wang, W. I.

PY - 1986

Y1 - 1986

N2 - The current-voltage characteristics of Ga1-xAlxAs-GaAs-Ga1-xAlx As double-barrier devices show, in addition to resonant tunneling via quasibound states, well-defined structures corresponding to energies higher than the barrier height. These new features are interpreted as resonant tunneling through confined states in Ga1-xAlxAs, at the X point of the Brillouin zone.

AB - The current-voltage characteristics of Ga1-xAlxAs-GaAs-Ga1-xAlx As double-barrier devices show, in addition to resonant tunneling via quasibound states, well-defined structures corresponding to energies higher than the barrier height. These new features are interpreted as resonant tunneling through confined states in Ga1-xAlxAs, at the X point of the Brillouin zone.

UR - https://www.scopus.com/pages/publications/0001620678

U2 - 10.1103/PhysRevB.33.7368

DO - 10.1103/PhysRevB.33.7368

M3 - Article

AN - SCOPUS:0001620678

SN - 0163-1829

VL - 33

SP - 7368

EP - 7370

JO - Physical Review B

JF - Physical Review B

IS - 10

ER -

Observation by resonant tunneling of high-energy states in GaAs-Ga1-xAlxAs quantum wells

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