Abstract
We have shown by magnetotunneling spectroscopy that at certain magnetic fields the Landé factor g of two-dimensional electrons is significantly enhanced relative to its three-dimensional value. The experiments were done using GaSbAlSbInAsAlSbGaSb heterostructures, in which a two-dimensional electron gas in the InAs layer is probed by holes from the GaSb electrodes tunneling in and out of it. The field dependence of the g factor is accounted for by the exchange interaction between electrons of the same spin.
| Original language | English |
|---|---|
| Pages (from-to) | 779-782 |
| Number of pages | 4 |
| Journal | Solid State Electronics |
| Volume | 37 |
| Issue number | 4-6 |
| DOIs | |
| State | Published - 1994 |
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