On demand shape-selective integration of individual vertical germanium nanowires on a Si(111) substrate via laser-localized heating

Sang Gil Ryu; Eunpa Kim; Jae Hyuck Yoo; David J. Hwang; Bin Xiang; Oscar D. Dubon; Andrew M. Minor; Costas P. Grigoropoulos

doi:10.1021/nn400186c

On demand shape-selective integration of individual vertical germanium nanowires on a Si(111) substrate via laser-localized heating

Sang Gil Ryu
, Eunpa Kim
, Jae Hyuck Yoo
, David J. Hwang
, Bin Xiang
, Oscar D. Dubon
, Andrew M. Minor
, Costas P. Grigoropoulos

Mechanical Engineering

University of California at Berkeley

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Semiconductor nanowire (NW) synthesis methods by blanket furnace heating produce structures of uniform size and shape. This study overcomes this constraint by applying laser-localized synthesis on catalytic nanodots defined by electron beam lithography in order to accomplish site- and shape-selective direct integration of vertically oriented germanium nanowires (GeNWs) on a single Si(111) substrate. Since the laser-induced local temperature field drives the growth process, each NW could be synthesized with distinctly different geometric features. The NW shape was dialed on demand, ranging from cylindrical to hexagonal/irregular hexagonal pyramid. Finite difference time domain analysis supported the tunability of the light absorption and scattering spectra via controlling the GeNW shape.

Original language	English
Pages (from-to)	2090-2098
Number of pages	9
Journal	ACS Nano
Volume	7
Issue number	3
DOIs	https://doi.org/10.1021/nn400186c
State	Published - Mar 26 2013

Keywords

facet
germanium nanowires
laser-assisted growth
site- and shape-selective integration
taper
vertical orientation

Access to Document

10.1021/nn400186c

Cite this

@article{90fdd10c435945dda14a50802dff66d2,

title = "On demand shape-selective integration of individual vertical germanium nanowires on a Si(111) substrate via laser-localized heating",

abstract = "Semiconductor nanowire (NW) synthesis methods by blanket furnace heating produce structures of uniform size and shape. This study overcomes this constraint by applying laser-localized synthesis on catalytic nanodots defined by electron beam lithography in order to accomplish site- and shape-selective direct integration of vertically oriented germanium nanowires (GeNWs) on a single Si(111) substrate. Since the laser-induced local temperature field drives the growth process, each NW could be synthesized with distinctly different geometric features. The NW shape was dialed on demand, ranging from cylindrical to hexagonal/irregular hexagonal pyramid. Finite difference time domain analysis supported the tunability of the light absorption and scattering spectra via controlling the GeNW shape.",

keywords = "facet, germanium nanowires, laser-assisted growth, site- and shape-selective integration, taper, vertical orientation",

author = "Ryu, \{Sang Gil\} and Eunpa Kim and Yoo, \{Jae Hyuck\} and Hwang, \{David J.\} and Bin Xiang and Dubon, \{Oscar D.\} and Minor, \{Andrew M.\} and Grigoropoulos, \{Costas P.\}",

year = "2013",

month = mar,

day = "26",

doi = "10.1021/nn400186c",

language = "English",

volume = "7",

pages = "2090--2098",

journal = "ACS Nano",

issn = "1936-0851",

number = "3",

}

TY - JOUR

T1 - On demand shape-selective integration of individual vertical germanium nanowires on a Si(111) substrate via laser-localized heating

AU - Ryu, Sang Gil

AU - Kim, Eunpa

AU - Yoo, Jae Hyuck

AU - Hwang, David J.

AU - Xiang, Bin

AU - Dubon, Oscar D.

AU - Minor, Andrew M.

AU - Grigoropoulos, Costas P.

PY - 2013/3/26

Y1 - 2013/3/26

N2 - Semiconductor nanowire (NW) synthesis methods by blanket furnace heating produce structures of uniform size and shape. This study overcomes this constraint by applying laser-localized synthesis on catalytic nanodots defined by electron beam lithography in order to accomplish site- and shape-selective direct integration of vertically oriented germanium nanowires (GeNWs) on a single Si(111) substrate. Since the laser-induced local temperature field drives the growth process, each NW could be synthesized with distinctly different geometric features. The NW shape was dialed on demand, ranging from cylindrical to hexagonal/irregular hexagonal pyramid. Finite difference time domain analysis supported the tunability of the light absorption and scattering spectra via controlling the GeNW shape.

AB - Semiconductor nanowire (NW) synthesis methods by blanket furnace heating produce structures of uniform size and shape. This study overcomes this constraint by applying laser-localized synthesis on catalytic nanodots defined by electron beam lithography in order to accomplish site- and shape-selective direct integration of vertically oriented germanium nanowires (GeNWs) on a single Si(111) substrate. Since the laser-induced local temperature field drives the growth process, each NW could be synthesized with distinctly different geometric features. The NW shape was dialed on demand, ranging from cylindrical to hexagonal/irregular hexagonal pyramid. Finite difference time domain analysis supported the tunability of the light absorption and scattering spectra via controlling the GeNW shape.

KW - facet

KW - germanium nanowires

KW - laser-assisted growth

KW - site- and shape-selective integration

KW - taper

KW - vertical orientation

UR - https://www.scopus.com/pages/publications/84875659690

U2 - 10.1021/nn400186c

DO - 10.1021/nn400186c

M3 - Article

AN - SCOPUS:84875659690

SN - 1936-0851

VL - 7

SP - 2090

EP - 2098

JO - ACS Nano

JF - ACS Nano

IS - 3

ER -

On demand shape-selective integration of individual vertical germanium nanowires on a Si(111) substrate via laser-localized heating

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this