On the hall resistivity of nHgCdTe

H. D. Drew; V. J. Goldman; M. Shayegan

doi:10.1016/0038-1098(87)90855-6

On the hall resistivity of nHgCdTe

H. D. Drew
, V. J. Goldman
, M. Shayegan

Physics and Astronomy

University of Maryland, College Park
Princeton University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We discuss the measurements of the Hall resistivity of nHgCdTe and InSb which have demonstrated the similarity of the electronic properties of these two materials. Gebhardt and Nimitz [1] dispute the validity of our results. We cite the evidence that confirms the correctness of our original observations.

Original language	English
Pages (from-to)	575-576
Number of pages	2
Journal	Solid State Communications
Volume	63
Issue number	7
DOIs	https://doi.org/10.1016/0038-1098(87)90855-6
State	Published - Aug 1987

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title = "On the hall resistivity of nHgCdTe",

abstract = "We discuss the measurements of the Hall resistivity of nHgCdTe and InSb which have demonstrated the similarity of the electronic properties of these two materials. Gebhardt and Nimitz [1] dispute the validity of our results. We cite the evidence that confirms the correctness of our original observations.",

author = "Drew, \{H. D.\} and Goldman, \{V. J.\} and M. Shayegan",

year = "1987",

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T1 - On the hall resistivity of nHgCdTe

AU - Drew, H. D.

AU - Goldman, V. J.

AU - Shayegan, M.

PY - 1987/8

Y1 - 1987/8

N2 - We discuss the measurements of the Hall resistivity of nHgCdTe and InSb which have demonstrated the similarity of the electronic properties of these two materials. Gebhardt and Nimitz [1] dispute the validity of our results. We cite the evidence that confirms the correctness of our original observations.

AB - We discuss the measurements of the Hall resistivity of nHgCdTe and InSb which have demonstrated the similarity of the electronic properties of these two materials. Gebhardt and Nimitz [1] dispute the validity of our results. We cite the evidence that confirms the correctness of our original observations.

UR - https://www.scopus.com/pages/publications/0023396569

U2 - 10.1016/0038-1098(87)90855-6

DO - 10.1016/0038-1098(87)90855-6

M3 - Article

AN - SCOPUS:0023396569

SN - 0038-1098

VL - 63

SP - 575

EP - 576

JO - Solid State Communications

JF - Solid State Communications

IS - 7

ER -

On the hall resistivity of nHgCdTe

Abstract

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