Optical gain and loss in 2.3-2.5 μm InGaAsSb/AlGaAsSb QW broad-area and ridge-waveguide lasers

D. Z. Garbuzov; G. L. Belenky; D. V. Donetsky; R. U. Martinelli; H. Lee; J. C. Connolly

Optical gain and loss in 2.3-2.5 μm InGaAsSb/AlGaAsSb QW broad-area and ridge-waveguide lasers

D. Z. Garbuzov
, G. L. Belenky
, D. V. Donetsky
, R. U. Martinelli
, H. Lee
, J. C. Connolly

Electrical Engineering

Stony Brook University

Research output: Contribution to conference › Paper › peer-review

Abstract

The current and temperature dependencies of the modal gain in 2.3-2.5 μm semiconductor broad-area and ridge-waveguide lasers, were measured. The room temperature optical gain data obtained for a 2.3 μm broad area device, allow the determination of internal loss, internal efficiency and the rate of broadening of material gain with temperature and current. The rise of the high energy peak of the optical gain at elevated currents and temperatures was found to be associated with the transition between the second sub-bands in the quantum well.

Original language	English
Pages	40
Number of pages	1
State	Published - 2000
Event	2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) - Nice, France Duration: Sep 10 2000 → Sep 15 2000

Conference

Conference	2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000)
City	Nice, France
Period	09/10/00 → 09/15/00

Cite this

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title = "Optical gain and loss in 2.3-2.5 μm InGaAsSb/AlGaAsSb QW broad-area and ridge-waveguide lasers",

abstract = "The current and temperature dependencies of the modal gain in 2.3-2.5 μm semiconductor broad-area and ridge-waveguide lasers, were measured. The room temperature optical gain data obtained for a 2.3 μm broad area device, allow the determination of internal loss, internal efficiency and the rate of broadening of material gain with temperature and current. The rise of the high energy peak of the optical gain at elevated currents and temperatures was found to be associated with the transition between the second sub-bands in the quantum well.",

author = "Garbuzov, \{D. Z.\} and Belenky, \{G. L.\} and Donetsky, \{D. V.\} and Martinelli, \{R. U.\} and H. Lee and Connolly, \{J. C.\}",

year = "2000",

language = "English",

pages = "40",

note = "2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) ; Conference date: 10-09-2000 Through 15-09-2000",

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TY - CONF

T1 - Optical gain and loss in 2.3-2.5 μm InGaAsSb/AlGaAsSb QW broad-area and ridge-waveguide lasers

AU - Garbuzov, D. Z.

AU - Belenky, G. L.

AU - Donetsky, D. V.

AU - Martinelli, R. U.

AU - Lee, H.

AU - Connolly, J. C.

PY - 2000

Y1 - 2000

N2 - The current and temperature dependencies of the modal gain in 2.3-2.5 μm semiconductor broad-area and ridge-waveguide lasers, were measured. The room temperature optical gain data obtained for a 2.3 μm broad area device, allow the determination of internal loss, internal efficiency and the rate of broadening of material gain with temperature and current. The rise of the high energy peak of the optical gain at elevated currents and temperatures was found to be associated with the transition between the second sub-bands in the quantum well.

AB - The current and temperature dependencies of the modal gain in 2.3-2.5 μm semiconductor broad-area and ridge-waveguide lasers, were measured. The room temperature optical gain data obtained for a 2.3 μm broad area device, allow the determination of internal loss, internal efficiency and the rate of broadening of material gain with temperature and current. The rise of the high energy peak of the optical gain at elevated currents and temperatures was found to be associated with the transition between the second sub-bands in the quantum well.

UR - https://www.scopus.com/pages/publications/0033713316

M3 - Paper

AN - SCOPUS:0033713316

SP - 40

T2 - 2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000)

Y2 - 10 September 2000 through 15 September 2000

ER -

Optical gain and loss in 2.3-2.5 μm InGaAsSb/AlGaAsSb QW broad-area and ridge-waveguide lasers

Abstract

Conference

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