Abstract
The formation of a GaSb-AlSb superlattice grown by molecular beam epitaxy has been demonstrated metallurgically from x-ray diffraction and optically from electroreflectance and photoluminescence measurements. The luminescence spectra exhibit emission peaks associated with interband transitions between quantum states as well as acceptor impurities.
| Original language | English |
|---|---|
| Pages (from-to) | 152-154 |
| Number of pages | 3 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 1 |
| Issue number | 2 |
| DOIs | |
| State | Published - 1982 |
| Event | Proc of the Mol Beam Epitaxy Workshop, 4th - Urbana-Champaign, IL, USA Duration: Oct 21 1982 → Oct 22 1982 |
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