Optical pumping of IV-VI semiconductor multiple quantum well materials using a GaSb-based laser with emission at λ=2.5 μm

Room-temperature photoluminescence (PL) measurements of IV-VI semiconductor multiple quantum well (MQW) structures using diode laser optical pumping at two different excitation wavelengths, 2.5 and 0.91 μm, are described. Active region temperatures during continuous-wave optical pumping were determined from blueshifts in PL emission energies. Temperatures were between 22.7 and 29.5 °C lower for 2.5-μm pumping as compared to 0.91-μm pumping at the same power level of 100 mW. Heating effects are also shown to be smaller for MQW samples with more narrow PbSe wells.