@inproceedings{87bfe2c952544401aa77a209ef9d02ee,
title = "Optimization of 150 mm 4H SiC substrate crystal quality",
abstract = "Continuous optimization of bulk 4H SiC PVT crystal growth processes has yielded an improvement in 150 mm wafer shape, as well as a marked reduction in stacking fault density. Mean wafer bow and warp decreased by 26\% and 14\%, respectively, while stacking faults were nearly eliminated from wafers produced using the refined process. These quality enhancements corresponded to an adjustment to key thermal parameters predicted to control intrinsic crystal stresses, and a reduction in crystal dome curvature.",
keywords = "150 mm, 4H polytype, Bulk crystal growth, Lattice bending, Physical vapor transport, Power electronics, Silicon carbide, Stacking faults, Stress reduction, Wafer bow, Wafer warp",
author = "Ian Manning and Chung, \{Gil Yong\} and Edward Sanchez and Yu Yang and Guo, \{Jian Qiu\} and Ouloide Goue and Balaji Raghothamachar and Michael Dudley",
note = "Publisher Copyright: {\textcopyright} 2018 Trans Tech Publications, Switzerland.; International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 ; Conference date: 17-09-2017 Through 22-09-2017",
year = "2018",
doi = "10.4028/www.scientific.net/MSF.924.11",
language = "English",
isbn = "9783035711455",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "11--14",
editor = "Robert Stahlbush and Philip Neudeck and Anup Bhalla and Devaty, \{Robert P.\} and Michael Dudley and Aivars Lelis",
booktitle = "Silicon Carbide and Related Materials, 2017",
}