Optimization of p-doping profile of 1.3-μm InGaAsP/InP MQW lasers for high-temperature operation

D. V. Donetsky; C. L. Reynolds; G. L. Belenky; G. E. Shtengel; R. F. Kazarinov; S. Luryi

Optimization of p-doping profile of 1.3-μm InGaAsP/InP MQW lasers for high-temperature operation

D. V. Donetsky
, C. L. Reynolds
, G. L. Belenky
, G. E. Shtengel
, R. F. Kazarinov
, S. Luryi

Electrical Engineering

Stony Brook University

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

A study was carried out to show that alignment of p-doping profile within the separate confinement heterostructure (SCH) layer allows to achieve even lower threshold current and to minimize temperature sensitivity of external efficiency. Direct measurements of optical loss devices with different doping profiles were performed. Growth, fabrication, and characterization of uncoated broad-area lasers were made.

Original language	English
Pages	302-303
Number of pages	2
State	Published - 1998
Event	Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO - San Francisco, CA, USA Duration: May 3 1998 → May 8 1998

Conference

Conference	Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO
City	San Francisco, CA, USA
Period	05/3/98 → 05/8/98

Cite this

@conference{cf2ed580ec884497bc89775a60434d8f,

title = "Optimization of p-doping profile of 1.3-μm InGaAsP/InP MQW lasers for high-temperature operation",

abstract = "A study was carried out to show that alignment of p-doping profile within the separate confinement heterostructure (SCH) layer allows to achieve even lower threshold current and to minimize temperature sensitivity of external efficiency. Direct measurements of optical loss devices with different doping profiles were performed. Growth, fabrication, and characterization of uncoated broad-area lasers were made.",

author = "Donetsky, \{D. V.\} and Reynolds, \{C. L.\} and Belenky, \{G. L.\} and Shtengel, \{G. E.\} and Kazarinov, \{R. F.\} and S. Luryi",

year = "1998",

language = "English",

pages = "302--303",

note = "Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO ; Conference date: 03-05-1998 Through 08-05-1998",

}

TY - CONF

T1 - Optimization of p-doping profile of 1.3-μm InGaAsP/InP MQW lasers for high-temperature operation

AU - Donetsky, D. V.

AU - Reynolds, C. L.

AU - Belenky, G. L.

AU - Shtengel, G. E.

AU - Kazarinov, R. F.

AU - Luryi, S.

PY - 1998

Y1 - 1998

N2 - A study was carried out to show that alignment of p-doping profile within the separate confinement heterostructure (SCH) layer allows to achieve even lower threshold current and to minimize temperature sensitivity of external efficiency. Direct measurements of optical loss devices with different doping profiles were performed. Growth, fabrication, and characterization of uncoated broad-area lasers were made.

AB - A study was carried out to show that alignment of p-doping profile within the separate confinement heterostructure (SCH) layer allows to achieve even lower threshold current and to minimize temperature sensitivity of external efficiency. Direct measurements of optical loss devices with different doping profiles were performed. Growth, fabrication, and characterization of uncoated broad-area lasers were made.

UR - https://www.scopus.com/pages/publications/0031637765

M3 - Paper

AN - SCOPUS:0031637765

SP - 302

EP - 303

T2 - Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO

Y2 - 3 May 1998 through 8 May 1998

ER -

Optimization of p-doping profile of 1.3-μm InGaAsP/InP MQW lasers for high-temperature operation

Abstract

Conference

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