Optoelectronic Microwave-Range Frequency Mixing in Semiconductor Lasers

Efim L. Portnoi; Vera B. Gorfinkel; Eugene A. Avrutin; Iain G. Thayne; David A. Barrow; John H. Marsh; Serge Luryi

doi:10.1109/2944.401228

Optoelectronic Microwave-Range Frequency Mixing in Semiconductor Lasers

Efim L. Portnoi
, Vera B. Gorfinkel
, Eugene A. Avrutin
, Iain G. Thayne
, David A. Barrow
, John H. Marsh
, Serge Luryi

Electrical Engineering

Ioffe Physical Technical Institute
University of Glasgow
Stony Brook University

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Optoelectronic mixing of very high-frequency amplitude-modulated signals using a semiconductor laser simultaneously as a local oscillator and a mixer is proposed. Three possible constructions of a monolithically integrated up-or down-converter are considered theoretically: a four-terminal semiconductor laser with dual pumping current/modal gain control, and both a passively mode-locked and a passively Q-switched semiconductor laser monolithically integrated with an electroabsorption or pumping current modulator. Experimental verification of the feasibility of the laser-mixer concept is presented.

Original language	English
Pages (from-to)	451-460
Number of pages	10
Journal	IEEE Journal of Selected Topics in Quantum Electronics
Volume	1
Issue number	2
DOIs	https://doi.org/10.1109/2944.401228
State	Published - Jun 1995

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10.1109/2944.401228

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abstract = "Optoelectronic mixing of very high-frequency amplitude-modulated signals using a semiconductor laser simultaneously as a local oscillator and a mixer is proposed. Three possible constructions of a monolithically integrated up-or down-converter are considered theoretically: a four-terminal semiconductor laser with dual pumping current/modal gain control, and both a passively mode-locked and a passively Q-switched semiconductor laser monolithically integrated with an electroabsorption or pumping current modulator. Experimental verification of the feasibility of the laser-mixer concept is presented.",

author = "Portnoi, \{Efim L.\} and Gorfinkel, \{Vera B.\} and Avrutin, \{Eugene A.\} and Thayne, \{Iain G.\} and Barrow, \{David A.\} and Marsh, \{John H.\} and Serge Luryi",

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AU - Portnoi, Efim L.

AU - Gorfinkel, Vera B.

AU - Avrutin, Eugene A.

AU - Thayne, Iain G.

AU - Barrow, David A.

AU - Marsh, John H.

AU - Luryi, Serge

PY - 1995/6

Y1 - 1995/6

N2 - Optoelectronic mixing of very high-frequency amplitude-modulated signals using a semiconductor laser simultaneously as a local oscillator and a mixer is proposed. Three possible constructions of a monolithically integrated up-or down-converter are considered theoretically: a four-terminal semiconductor laser with dual pumping current/modal gain control, and both a passively mode-locked and a passively Q-switched semiconductor laser monolithically integrated with an electroabsorption or pumping current modulator. Experimental verification of the feasibility of the laser-mixer concept is presented.

AB - Optoelectronic mixing of very high-frequency amplitude-modulated signals using a semiconductor laser simultaneously as a local oscillator and a mixer is proposed. Three possible constructions of a monolithically integrated up-or down-converter are considered theoretically: a four-terminal semiconductor laser with dual pumping current/modal gain control, and both a passively mode-locked and a passively Q-switched semiconductor laser monolithically integrated with an electroabsorption or pumping current modulator. Experimental verification of the feasibility of the laser-mixer concept is presented.

UR - https://www.scopus.com/pages/publications/0029327824

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ER -

Optoelectronic Microwave-Range Frequency Mixing in Semiconductor Lasers

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