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Origins of twinned microstructures in B12As2 epilayers grown on (0001) 6H-SiC and their influence on physical properties

  • Yu Zhang
  • , Hui Chen
  • , Ning Zhang
  • , Michael Dudley
  • , Yinyan Gong
  • , Martin Kuball
  • , Zhou Xu
  • , Yi Zhang
  • , James H. Edgar
  • , Lihua Zhang
  • , Yimei Zhu
  • Stony Brook University
  • University of Bristol
  • Kansas State University
  • Brookhaven National Laboratory

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The defect structure in B12As2 epitaxial layers grown at two different temperatures on (0001) 6H-SiC by chemical vapor deposition (CVD) was studied using synchrotron white beam x-ray topography (SWBXT) and high resolution transmission electron microscopy (HRTEM). The observed differences in microstructures were correlated with the differences in nucleation at the two growth temperatures. The effect of the difference in microstructure on macroscopic properties of the B12As2 was illustrated using the example of thermal conductivity which was measured using the 3-ω technique. The relationship between the measured thermal conductivity and observed microstructures is discussed.

Original languageEnglish
Title of host publicationNuclear Radiation Detection Materials - 2009
Pages121-127
Number of pages7
StatePublished - 2010
Event2009 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 14 2009Apr 17 2009

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1164
ISSN (Print)0272-9172

Conference

Conference2009 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA
Period04/14/0904/17/09

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