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Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources

  • Sudip K. Mazumder
  • , Lars F. Voss
  • , Karen M. Dowling
  • , Adam Conway
  • , David Hall
  • , Robert J. Kaplar
  • , Gregory W. Pickrell
  • , Jack Flicker
  • , Andrew T. Binder
  • , Srabanti Chowdhury
  • , Victor Veliadis
  • , Fang Luo
  • , Sameh Khalil
  • , Thomas Aichinger
  • , Sandeep R. Bahl
  • , Matteo Meneghini
  • , Alain B. Charles
  • University of Illinois at Chicago
  • Lawrence Livermore National Laboratory
  • Delft University of Technology
  • RTX Corporation
  • II-VI Finisar Inc.
  • Sandia National Laboratories, New Mexico
  • Stanford University
  • North Carolina State University
  • Infineon
  • Infineon Technologies AG
  • Texas Instruments
  • University of Padua
  • ABCsWorld Consulting

Research output: Contribution to journalArticlepeer-review

69 Scopus citations

Abstract

This article provides an overview of power semiconductor devices (PSDs) for the distributed energy resource (DER) system. To begin with, an overview of electrically triggered silicon carbide (SiC) and gallium nitride (GaN) devices followed by a brief narration of ultrawide bandgap (UWBG) PSDs and, subsequently, an overview of optically activated PSDs encompassing photoconductive semiconductor switch (PCSS) and optical bipolar PSDs are provided. Finally, an overview of PSD packaging and reliability is captured.

Original languageEnglish
Pages (from-to)3957-3982
Number of pages26
JournalIEEE Journal of Emerging and Selected Topics in Power Electronics
Volume11
Issue number4
DOIs
StatePublished - Aug 1 2023

Keywords

  • Devices
  • electrical
  • materials
  • optical
  • packaging
  • reliability
  • ultrawide bandgap (UWBG)
  • wide bandgap (WBG)

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