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Pair distribution function analysis: The role of structural degrees of freedom in the high-pressure insulator to metal transition of VO2

  • M. Baldini
  • , P. Postorino
  • , L. Malavasi
  • , C. Marini
  • , K. W. Chapman
  • , Ho Kwang Mao
  • United States Department of Energy
  • University of Rome La Sapienza
  • University of Pavia
  • CELLS - ALBA
  • Carnegie Institution of Washington
  • Center for High Pressure Science & Technology Advanced Research

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

The evolution of the local structure of VO2 was investigated across the pressure-induced insulator to metal transition (IMT) by means of pair distribution function measurements. The pressure behavior of the V-V and V-O bond lengths have been determined. The data demonstrated that the pressure-driven IMT is not activated by the suppression of the Peierls-type distortion. A clear octahedra symmetrization is observed in the metallic phase, suggesting a link between structural degree of freedom and the metallization process.

Original languageEnglish
Article number245137
JournalPhysical Review B
Volume93
Issue number24
DOIs
StatePublished - Jun 17 2016

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