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Partial dislocations in the X-ray topography of as-grown hexagonal silicon carbide crystals

  • Stony Brook University

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Dislocations visible in X-ray topographs of as-grown hexagonal silicon carbide Lely platelets and physical vapor transport process wafers extinguished as if they had Burgers vectors of 1/3〈112̄0〉. Under the electron microscope, beneath the resolution of X-ray topography, short lengths of these dislocations were shown to consist of pairs of 1/3〈101̄0〉 Shockley partials spanning narrow ribbons of stacking fault. An unusual example of a b=1/3〈112̄0〉 dislocation in a Lely platelet visibly separated into its partials in an X-ray topograph was presented.

Original languageEnglish
Pages (from-to)173-177
Number of pages5
JournalMaterials Science and Engineering B
Volume87
Issue number2
DOIs
StatePublished - Nov 15 2001

Keywords

  • Dislocations
  • Silicon carbide crystals
  • X-ray topographs

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