@inproceedings{0e45e617541a400baabed228104ab966,
title = "Passive mode-locking of 3.25μm GaSb-based type-I quantum-well cascade diode lasers",
abstract = "Passively mode-locked type-I quantum well cascade diode lasers emitting in the methane absorption band near 3.25 μm were designed, fabricated and characterized. The deep etched ∼5.5-μm-wide single spatial mode ridge waveguide design utilizing split-contact architecture was implemented. The devices with absorber to gain section length ratios of 11\% and 5.5\% were studied. Lasers with the longer absorber section (∼300 μm) generated smooth bell-shape-like emission spectrum with about 30 lasing modes at full-width-at-half-maximum level. Devices with reverse biased absorber section demonstrated stable radio frequency beat with nearly perfect Lorentzian shape over four orders of magnitude of intensity. The estimated pulse-to-pulse timing jitter was about 110 fs/cycle. Laser generated average power of more than 1 mW in mode-locked regime.",
keywords = "antimonide, cascade pumping, diode lasers, mid-infrared, mode-locked laser, type-I quantum well",
author = "Tao Feng and Leon Shterengas and Gela Kipshidze and Takashi Hosoda and Meng Wang and Gregory Belenky",
note = "Publisher Copyright: {\textcopyright} COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.; Novel In-Plane Semiconductor Lasers XVII 2018 ; Conference date: 29-01-2018 Through 01-02-2018",
year = "2018",
doi = "10.1117/12.2287463",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Smowton, \{Peter M.\} and Belyanin, \{Alexey A.\}",
booktitle = "Novel In-Plane Semiconductor Lasers XVII",
}