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Performance improvements in low-noise oscillators and power combiners with harmonic-mode InP gunn devices

  • University of Leeds

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Abstract-InP Gunn devices with graded doping profiles were evaluated for second-harmonic power extraction above 260 GHz and third-harmonic power extraction above 400 GHz. The best devices generated radio frequency (RF) output power levels of more than 3.5 mW at 275-300 GHz, 1.6 mW at 329 GHz, and 0.7 mW at 333 GHz. The highest observed second-harmonic frequency was 345 GHz. Two devices each in an in-line power combining circuit generated 6.1 mW at 285 GHz and 2.7 mW at 316 GHz with combining efficiencies of more than 65%. In a thirdharmonic mode, the best devices generated 45 μW at 409 GHz, 40 μW at 412 GHz, and 40 μW at 422 GHz.

Original languageEnglish
Title of host publication17th International Symposium on Space Terahertz Technology 2006, ISSTT 2006
Pages147-150
Number of pages4
StatePublished - 2006
Event17th International Symposium on Space Terahertz Technology 2006, ISSTT 2006 - Paris, France
Duration: May 10 2006May 12 2006

Publication series

Name17th International Symposium on Space Terahertz Technology 2006, ISSTT 2006

Conference

Conference17th International Symposium on Space Terahertz Technology 2006, ISSTT 2006
Country/TerritoryFrance
CityParis
Period05/10/0605/12/06

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