Persistent photo-conductance and photoquenching of selectively doped Al0.3Ga0.7As GaAs/heterojunctions

M. I. Nathan; T. N. Jackson; P. D. Kirchner; E. E. Mendez; G. D. Pettit; J. M. Woodall

doi:10.1007/BF02676799

Persistent photo-conductance and photoquenching of selectively doped Al_0.3Ga_0.7As GaAs/heterojunctions

M. I. Nathan
, T. N. Jackson
, P. D. Kirchner
, E. E. Mendez
, G. D. Pettit
, J. M. Woodall

Physics and Astronomy

IBM

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

The dependence on photon energy of the persistent photoconductivity (PPC) in selectively doped high mobility Al_0.3Ga_0.7As-GaAs heterostructures has been measured at temperatures below 80 K. A decrease in conductivity due to light exposure at one wavelength after exposure to light at another wavelength - photo-quenching - is also found. It is concluded that deep centers in GaAs and AlGaAs other than the DX center in AlGaAs are mainly responsible for PPC.

Original language	English
Pages (from-to)	719-725
Number of pages	7
Journal	Journal of Electronic Materials
Volume	12
Issue number	4
DOIs	https://doi.org/10.1007/BF02676799
State	Published - Jul 1983

Keywords

AlGaAs
GaAs
heterojunctions
persistent photconductivity

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10.1007/BF02676799

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@article{be54581dea624071b35a8dcdf8f6dec4,

title = "Persistent photo-conductance and photoquenching of selectively doped Al0.3Ga0.7As GaAs/heterojunctions",

abstract = "The dependence on photon energy of the persistent photoconductivity (PPC) in selectively doped high mobility Al0.3Ga0.7As-GaAs heterostructures has been measured at temperatures below 80 K. A decrease in conductivity due to light exposure at one wavelength after exposure to light at another wavelength - photo-quenching - is also found. It is concluded that deep centers in GaAs and AlGaAs other than the DX center in AlGaAs are mainly responsible for PPC.",

keywords = "AlGaAs, GaAs, heterojunctions, persistent photconductivity",

author = "Nathan, \{M. I.\} and Jackson, \{T. N.\} and Kirchner, \{P. D.\} and Mendez, \{E. E.\} and Pettit, \{G. D.\} and Woodall, \{J. M.\}",

year = "1983",

month = jul,

doi = "10.1007/BF02676799",

language = "English",

volume = "12",

pages = "719--725",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

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TY - JOUR

T1 - Persistent photo-conductance and photoquenching of selectively doped Al0.3Ga0.7As GaAs/heterojunctions

AU - Nathan, M. I.

AU - Jackson, T. N.

AU - Kirchner, P. D.

AU - Mendez, E. E.

AU - Pettit, G. D.

AU - Woodall, J. M.

PY - 1983/7

Y1 - 1983/7

N2 - The dependence on photon energy of the persistent photoconductivity (PPC) in selectively doped high mobility Al0.3Ga0.7As-GaAs heterostructures has been measured at temperatures below 80 K. A decrease in conductivity due to light exposure at one wavelength after exposure to light at another wavelength - photo-quenching - is also found. It is concluded that deep centers in GaAs and AlGaAs other than the DX center in AlGaAs are mainly responsible for PPC.

AB - The dependence on photon energy of the persistent photoconductivity (PPC) in selectively doped high mobility Al0.3Ga0.7As-GaAs heterostructures has been measured at temperatures below 80 K. A decrease in conductivity due to light exposure at one wavelength after exposure to light at another wavelength - photo-quenching - is also found. It is concluded that deep centers in GaAs and AlGaAs other than the DX center in AlGaAs are mainly responsible for PPC.

KW - AlGaAs

KW - GaAs

KW - heterojunctions

KW - persistent photconductivity

UR - https://www.scopus.com/pages/publications/0020780356

U2 - 10.1007/BF02676799

DO - 10.1007/BF02676799

M3 - Article

AN - SCOPUS:0020780356

SN - 0361-5235

VL - 12

SP - 719

EP - 725

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 4

ER -

Persistent photo-conductance and photoquenching of selectively doped Al_0.3Ga_0.7As GaAs/heterojunctions

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Keywords

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