Photo- and electroluminescence in strong electric fields in Sb-containing narrow gap semiconductor materials

M. Ya Vinnichenko; I. S. Makhov; V. Yu Panevin; A. V. Selivanov; D. A. Firsov; L. E. Vorobjev; N. A. Pikhtin; K. V. Bakhvalov; L. Shterengas; G. Belenky; G. Kipshidze

doi:10.1088/1742-6596/741/1/012148

Photo- and electroluminescence in strong electric fields in Sb-containing narrow gap semiconductor materials

M. Ya Vinnichenko
, I. S. Makhov
, V. Yu Panevin
, A. V. Selivanov
, D. A. Firsov
, L. E. Vorobjev
, N. A. Pikhtin
, K. V. Bakhvalov
, L. Shterengas
, G. Belenky
, G. Kipshidze

Electrical Engineering

Peter the Great St. Petersburg Polytechnic University
Ioffe Physical Technical Institute
Stony Brook University

Research output: Contribution to journal › Conference article › peer-review

Abstract

Spectra of the mid-infrared interband luminescence under interband optical pumping and impact ionization in strong electric fields are experimentally studied in the InAsSb epilayer and in the monocrystalline InSb in the temperature range from 10 K to 85 K. The recombination radiation anisotropy in InSb arising due to electron heating and drift in strong electric fields is observed.

Original language	English
Article number	012148
Journal	Journal of Physics: Conference Series
Volume	741
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/741/1/012148
State	Published - Sep 15 2016
Event	3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, Saint Petersburg OPEN 2016 - St Petersburg, Russian Federation Duration: Mar 28 2016 → Mar 30 2016

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10.1088/1742-6596/741/1/012148

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Vinnichenko, M. Y., Makhov, I. S., Panevin, V. Y., Selivanov, A. V., Firsov, D. A., Vorobjev, L. E., Pikhtin, N. A., Bakhvalov, K. V., Shterengas, L., Belenky, G., & Kipshidze, G. (2016). Photo- and electroluminescence in strong electric fields in Sb-containing narrow gap semiconductor materials. Journal of Physics: Conference Series, 741(1), Article 012148. https://doi.org/10.1088/1742-6596/741/1/012148

@article{06b3fc8efaa24682b6664a1e49a11355,

title = "Photo- and electroluminescence in strong electric fields in Sb-containing narrow gap semiconductor materials",

abstract = "Spectra of the mid-infrared interband luminescence under interband optical pumping and impact ionization in strong electric fields are experimentally studied in the InAsSb epilayer and in the monocrystalline InSb in the temperature range from 10 K to 85 K. The recombination radiation anisotropy in InSb arising due to electron heating and drift in strong electric fields is observed.",

author = "Vinnichenko, \{M. Ya\} and Makhov, \{I. S.\} and Panevin, \{V. Yu\} and Selivanov, \{A. V.\} and Firsov, \{D. A.\} and Vorobjev, \{L. E.\} and Pikhtin, \{N. A.\} and Bakhvalov, \{K. V.\} and L. Shterengas and G. Belenky and G. Kipshidze",

note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, Saint Petersburg OPEN 2016 ; Conference date: 28-03-2016 Through 30-03-2016",

year = "2016",

month = sep,

day = "15",

doi = "10.1088/1742-6596/741/1/012148",

language = "English",

volume = "741",

journal = "Journal of Physics: Conference Series",

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}

Vinnichenko, MY, Makhov, IS, Panevin, VY, Selivanov, AV, Firsov, DA, Vorobjev, LE, Pikhtin, NA, Bakhvalov, KV, Shterengas, L, Belenky, G & Kipshidze, G 2016, 'Photo- and electroluminescence in strong electric fields in Sb-containing narrow gap semiconductor materials', Journal of Physics: Conference Series, vol. 741, no. 1, 012148. https://doi.org/10.1088/1742-6596/741/1/012148

TY - JOUR

T1 - Photo- and electroluminescence in strong electric fields in Sb-containing narrow gap semiconductor materials

AU - Vinnichenko, M. Ya

AU - Makhov, I. S.

AU - Panevin, V. Yu

AU - Selivanov, A. V.

AU - Firsov, D. A.

AU - Vorobjev, L. E.

AU - Pikhtin, N. A.

AU - Bakhvalov, K. V.

AU - Shterengas, L.

AU - Belenky, G.

AU - Kipshidze, G.

PY - 2016/9/15

Y1 - 2016/9/15

N2 - Spectra of the mid-infrared interband luminescence under interband optical pumping and impact ionization in strong electric fields are experimentally studied in the InAsSb epilayer and in the monocrystalline InSb in the temperature range from 10 K to 85 K. The recombination radiation anisotropy in InSb arising due to electron heating and drift in strong electric fields is observed.

AB - Spectra of the mid-infrared interband luminescence under interband optical pumping and impact ionization in strong electric fields are experimentally studied in the InAsSb epilayer and in the monocrystalline InSb in the temperature range from 10 K to 85 K. The recombination radiation anisotropy in InSb arising due to electron heating and drift in strong electric fields is observed.

UR - https://www.scopus.com/pages/publications/84989283202

U2 - 10.1088/1742-6596/741/1/012148

DO - 10.1088/1742-6596/741/1/012148

M3 - Conference article

AN - SCOPUS:84989283202

SN - 1742-6588

VL - 741

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012148

T2 - 3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, Saint Petersburg OPEN 2016

Y2 - 28 March 2016 through 30 March 2016

ER -

Photo- and electroluminescence in strong electric fields in Sb-containing narrow gap semiconductor materials

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