Photoluminescence in InGaAsSb/AlGaAsSb quantum wells: Impact of nonradiative recombination

M. Ya Vinnichenko; I. S. Makhov; A. V. Selivanov; D. A. Firsov; L. E. Vorobjev; L. Shterengas; G. Belenky

doi:10.1088/1742-6596/816/1/012017

Photoluminescence in InGaAsSb/AlGaAsSb quantum wells: Impact of nonradiative recombination

M. Ya Vinnichenko
, I. S. Makhov
, A. V. Selivanov
, D. A. Firsov
, L. E. Vorobjev
, L. Shterengas
, G. Belenky

Electrical Engineering

Peter the Great St. Petersburg Polytechnic University
Stony Brook University

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

The photoluminescence in nanostructures with InGaAsSb/AlGaAsSb quantum wells of different widths is investigated experimentally under different pumping levels and theoretically. The experimentally determined dependencies of photoluminescence intensity on the optical pumping level are compared with the calculated dependences of photoluminescence intensity on the nonequilibrium carrier concentration. The presence of resonant nonradiative Auger recombination in one of the investigated samples is proved by the comparison between experiment and calculations.

Original language	English
Article number	012017
Journal	Journal of Physics: Conference Series
Volume	816
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/816/1/012017
State	Published - Apr 11 2017
Event	18th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2016 - St. Petersburg, Russian Federation Duration: Nov 28 2016 → Dec 2 2016

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10.1088/1742-6596/816/1/012017

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@article{a3d48d0d0a0a469ba9a3d38908482e65,

title = "Photoluminescence in InGaAsSb/AlGaAsSb quantum wells: Impact of nonradiative recombination",

abstract = "The photoluminescence in nanostructures with InGaAsSb/AlGaAsSb quantum wells of different widths is investigated experimentally under different pumping levels and theoretically. The experimentally determined dependencies of photoluminescence intensity on the optical pumping level are compared with the calculated dependences of photoluminescence intensity on the nonequilibrium carrier concentration. The presence of resonant nonradiative Auger recombination in one of the investigated samples is proved by the comparison between experiment and calculations.",

author = "Vinnichenko, \{M. Ya\} and Makhov, \{I. S.\} and Selivanov, \{A. V.\} and Firsov, \{D. A.\} and Vorobjev, \{L. E.\} and L. Shterengas and G. Belenky",

note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 18th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2016 ; Conference date: 28-11-2016 Through 02-12-2016",

year = "2017",

month = apr,

day = "11",

doi = "10.1088/1742-6596/816/1/012017",

language = "English",

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journal = "Journal of Physics: Conference Series",

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TY - JOUR

T1 - Photoluminescence in InGaAsSb/AlGaAsSb quantum wells

T2 - 18th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2016

AU - Vinnichenko, M. Ya

AU - Makhov, I. S.

AU - Selivanov, A. V.

AU - Firsov, D. A.

AU - Vorobjev, L. E.

AU - Shterengas, L.

AU - Belenky, G.

PY - 2017/4/11

Y1 - 2017/4/11

N2 - The photoluminescence in nanostructures with InGaAsSb/AlGaAsSb quantum wells of different widths is investigated experimentally under different pumping levels and theoretically. The experimentally determined dependencies of photoluminescence intensity on the optical pumping level are compared with the calculated dependences of photoluminescence intensity on the nonequilibrium carrier concentration. The presence of resonant nonradiative Auger recombination in one of the investigated samples is proved by the comparison between experiment and calculations.

AB - The photoluminescence in nanostructures with InGaAsSb/AlGaAsSb quantum wells of different widths is investigated experimentally under different pumping levels and theoretically. The experimentally determined dependencies of photoluminescence intensity on the optical pumping level are compared with the calculated dependences of photoluminescence intensity on the nonequilibrium carrier concentration. The presence of resonant nonradiative Auger recombination in one of the investigated samples is proved by the comparison between experiment and calculations.

UR - https://www.scopus.com/pages/publications/85018398844

U2 - 10.1088/1742-6596/816/1/012017

DO - 10.1088/1742-6596/816/1/012017

M3 - Conference article

AN - SCOPUS:85018398844

SN - 1742-6588

VL - 816

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012017

Y2 - 28 November 2016 through 2 December 2016

ER -

Photoluminescence in InGaAsSb/AlGaAsSb quantum wells: Impact of nonradiative recombination

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