Photoluminescence study of the incorporation of silicon in GaAs grown by molecular beam epitaxy

E. E. Mendez; M. Heiblum; R. Fisher; J. Klem; R. E. Thorne; H. Morkoç

doi:10.1063/1.332558

Photoluminescence study of the incorporation of silicon in GaAs grown by molecular beam epitaxy

E. E. Mendez
, M. Heiblum
, R. Fisher
, J. Klem
, R. E. Thorne
, H. Morkoç

Physics and Astronomy

IBM
University of Illinois at Urbana-Champaign

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

The effect of substrate temperature and As/Ga flux ratio on the incorporation of Si as a dopant in GaAs grown by molecular beam epitaxy has been studied by means of low-temperature photoluminescence (PL) measurements. It is shown that the acceptor character of Si is enhanced as the substrate temperature increases from 590 to 720v°C. The PL results suggest that the amount of Si self-compensation decreases when the atomic flux ratio increases from 2 to 6.

Original language	English
Pages (from-to)	4202-4204
Number of pages	3
Journal	Journal of Applied Physics
Volume	54
Issue number	7
DOIs	https://doi.org/10.1063/1.332558
State	Published - 1983

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title = "Photoluminescence study of the incorporation of silicon in GaAs grown by molecular beam epitaxy",

abstract = "The effect of substrate temperature and As/Ga flux ratio on the incorporation of Si as a dopant in GaAs grown by molecular beam epitaxy has been studied by means of low-temperature photoluminescence (PL) measurements. It is shown that the acceptor character of Si is enhanced as the substrate temperature increases from 590 to 720v°C. The PL results suggest that the amount of Si self-compensation decreases when the atomic flux ratio increases from 2 to 6.",

author = "Mendez, \{E. E.\} and M. Heiblum and R. Fisher and J. Klem and Thorne, \{R. E.\} and H. Morko{\c c}",

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journal = "Journal of Applied Physics",

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T1 - Photoluminescence study of the incorporation of silicon in GaAs grown by molecular beam epitaxy

AU - Mendez, E. E.

AU - Heiblum, M.

AU - Fisher, R.

AU - Klem, J.

AU - Thorne, R. E.

AU - Morkoç, H.

PY - 1983

Y1 - 1983

N2 - The effect of substrate temperature and As/Ga flux ratio on the incorporation of Si as a dopant in GaAs grown by molecular beam epitaxy has been studied by means of low-temperature photoluminescence (PL) measurements. It is shown that the acceptor character of Si is enhanced as the substrate temperature increases from 590 to 720v°C. The PL results suggest that the amount of Si self-compensation decreases when the atomic flux ratio increases from 2 to 6.

AB - The effect of substrate temperature and As/Ga flux ratio on the incorporation of Si as a dopant in GaAs grown by molecular beam epitaxy has been studied by means of low-temperature photoluminescence (PL) measurements. It is shown that the acceptor character of Si is enhanced as the substrate temperature increases from 590 to 720v°C. The PL results suggest that the amount of Si self-compensation decreases when the atomic flux ratio increases from 2 to 6.

UR - https://www.scopus.com/pages/publications/0020782837

U2 - 10.1063/1.332558

DO - 10.1063/1.332558

M3 - Article

AN - SCOPUS:0020782837

SN - 0021-8979

VL - 54

SP - 4202

EP - 4204

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

ER -

Photoluminescence study of the incorporation of silicon in GaAs grown by molecular beam epitaxy

Abstract

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