Abstract
Position-resolved timing characterisation tests were performed on individual pixels of hexagonal and trench 3D silicon sensors. An IR laser was used to deposit energy equivalent to 1 MIP with a 1μm spatial resolution onto each sensor, which were attached to custom-designed fast read-out electronics chips. Time of Arrival (ToA) values obtained were (544 ± 29.8) ps for the hexagonal geometry, and (515 ± 8.2) ps for the trench geometry.
| Original language | English |
|---|---|
| Article number | 168392 |
| Journal | Nuclear Inst. and Methods in Physics Research, A |
| Volume | 1054 |
| DOIs | |
| State | Published - Sep 2023 |
Keywords
- 3D silicon
- Timing characterisation
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