@inproceedings{74fca7cf41d3469fa6a52f27ea3de607,
title = "Post-growth micropipe formation in 4H-SiC",
abstract = "Understanding the growth and propagation of defects in SiC remains of interest in an effort to continue to improve device performance. A post-growth boule heat-treatment revealed to form micropipe pairs from apparent single screw dislocations is reviewed. In the treated samples almost no 1c threading screw dislocations were found. Instead, micropipe pairs were observed in similar densities to 1c threading screw dislocations in non-heat treated samples. It is hypothesized that the elevated temperatures allowed for enhanced dislocation mobility, enabling the transition.",
keywords = "4H silicon carbide, Defects, Dislocation, Micropipe, Threading screw dislocation",
author = "Jeffrey Quast and Michael Dudley and Jianqiu Guo and Darren Hansen and Ian Manning and Stephan Mueller and Balaji Raghothamachar and Edward Sanchez and Clinton Whiteley and Yu Yang",
note = "Publisher Copyright: {\textcopyright} 2016 Trans Tech Publications, Switzerland.; 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 ; Conference date: 04-10-2015 Through 09-10-2015",
year = "2016",
doi = "10.4028/www.scientific.net/MSF.858.367",
language = "English",
isbn = "9783035710427",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "367--370",
editor = "Fabrizio Roccaforte and Filippo Giannazzo and \{La Via\}, Francesco and Roberta Nipoti and Danilo Crippa and Mario Saggio",
booktitle = "Silicon Carbide and Related Materials 2015",
}