Pressure-enhanced fractional Chern insulators along a magic line in moiré transition metal dichalcogenides

Nicolás Morales-Durán; Jie Wang; Gabriel R. Schleder; Mattia Angeli; Ziyan Zhu; Efthimios Kaxiras; Cécile Repellin; Jennifer Cano

doi:10.1103/PhysRevResearch.5.L032022

Pressure-enhanced fractional Chern insulators along a magic line in moiré transition metal dichalcogenides

Nicolás Morales-Durán
, Jie Wang
, Gabriel R. Schleder
, Mattia Angeli
, Ziyan Zhu
, Efthimios Kaxiras
, Cécile Repellin
, Jennifer Cano

University of Texas at Austin
Simons Foundation
Harvard University
Centro Nacional de Pesquisa em Energia e Materiais
SLAC National Accelerator Laboratory
Université Grenoble Alpes

Research output: Contribution to journal › Article › peer-review

65 Scopus citations

Abstract

We show that pressure applied to twisted WSe2 can enhance the many-body gap and region of stability of a fractional Chern insulator at filling ν=1/3. Our results are based on exact diagonalization of a continuum model, whose pressure dependence is obtained through ab initio methods. We interpret our results in terms of a magic line in the pressure-vs-twist angle phase diagram: along the magic line, the bandwidth of the topmost moiré valence band is minimized while simultaneously its quantum geometry resembles that of an ideal Chern band. We expect our results to generalize to other twisted transition metal dichalcogenide homobilayers.

Original language	English
Article number	L032022
Journal	Physical Review Research
Volume	5
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevResearch.5.L032022
State	Published - Jul 2023

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10.1103/PhysRevResearch.5.L032022

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title = "Pressure-enhanced fractional Chern insulators along a magic line in moir{\'e} transition metal dichalcogenides",

abstract = "We show that pressure applied to twisted WSe2 can enhance the many-body gap and region of stability of a fractional Chern insulator at filling ν=1/3. Our results are based on exact diagonalization of a continuum model, whose pressure dependence is obtained through ab initio methods. We interpret our results in terms of a magic line in the pressure-vs-twist angle phase diagram: along the magic line, the bandwidth of the topmost moir{\'e} valence band is minimized while simultaneously its quantum geometry resembles that of an ideal Chern band. We expect our results to generalize to other twisted transition metal dichalcogenide homobilayers.",

author = "Nicol{\'a}s Morales-Dur{\'a}n and Jie Wang and Schleder, \{Gabriel R.\} and Mattia Angeli and Ziyan Zhu and Efthimios Kaxiras and C{\'e}cile Repellin and Jennifer Cano",

note = "Publisher Copyright: {\textcopyright} 2023 authors. Published by the American Physical Society. Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.",

year = "2023",

month = jul,

doi = "10.1103/PhysRevResearch.5.L032022",

language = "English",

volume = "5",

journal = "Physical Review Research",

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TY - JOUR

T1 - Pressure-enhanced fractional Chern insulators along a magic line in moiré transition metal dichalcogenides

AU - Morales-Durán, Nicolás

AU - Wang, Jie

AU - Schleder, Gabriel R.

AU - Angeli, Mattia

AU - Zhu, Ziyan

AU - Kaxiras, Efthimios

AU - Repellin, Cécile

AU - Cano, Jennifer

N1 - Publisher Copyright: © 2023 authors. Published by the American Physical Society. Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

PY - 2023/7

Y1 - 2023/7

N2 - We show that pressure applied to twisted WSe2 can enhance the many-body gap and region of stability of a fractional Chern insulator at filling ν=1/3. Our results are based on exact diagonalization of a continuum model, whose pressure dependence is obtained through ab initio methods. We interpret our results in terms of a magic line in the pressure-vs-twist angle phase diagram: along the magic line, the bandwidth of the topmost moiré valence band is minimized while simultaneously its quantum geometry resembles that of an ideal Chern band. We expect our results to generalize to other twisted transition metal dichalcogenide homobilayers.

AB - We show that pressure applied to twisted WSe2 can enhance the many-body gap and region of stability of a fractional Chern insulator at filling ν=1/3. Our results are based on exact diagonalization of a continuum model, whose pressure dependence is obtained through ab initio methods. We interpret our results in terms of a magic line in the pressure-vs-twist angle phase diagram: along the magic line, the bandwidth of the topmost moiré valence band is minimized while simultaneously its quantum geometry resembles that of an ideal Chern band. We expect our results to generalize to other twisted transition metal dichalcogenide homobilayers.

UR - https://www.scopus.com/pages/publications/85169295443

U2 - 10.1103/PhysRevResearch.5.L032022

DO - 10.1103/PhysRevResearch.5.L032022

M3 - Article

AN - SCOPUS:85169295443

SN - 2643-1564

VL - 5

JO - Physical Review Research

JF - Physical Review Research

IS - 3

M1 - L032022

ER -

Pressure-enhanced fractional Chern insulators along a magic line in moiré transition metal dichalcogenides

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