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Prismatic Slip in AlN Crystals Grown by PVT

  • Shanshan Hu
  • , Haoyan Fang
  • , Yafei Liu
  • , Hongyu Peng
  • , Tuerxun Ailihumaer
  • , Qianyu Cheng
  • , Zeyu Chen
  • , Rafael Dalmau
  • , Jeffrey Britt
  • , Raoul Schlesser
  • , Balaji Raghothamachar
  • , Michael Dudley
  • Stony Brook University
  • Hexatech Inc.

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Basal plane slip is the most frequently observed deformation mechanism in hexagonal aluminum nitride (AlN) crystals grown by the physical vapor transport (PVT) method. However, prismatic slip can also take place in such crystals. In this study, slip in the three prismatic slip systems with nonuniform distributions, observed in a commercial 50 mm AlN substrate wafer, was investigated. The nonuniformity was attributed to the distribution of resolved shear stress in each prismatic slip system caused by radial thermal gradients in the growing crystal boule. A radial thermal model was established to quantitively estimate the thermal stress across the area of the crystal boule during PVT growth. The model results correlated well with both the experimental observations and theoretical calculations of the critical resolved shear stress, revealing that radial thermal gradients play a key role in activating prismatic slip during AlN bulk growth.

Original languageEnglish
Title of host publication240th ECS Meeting - Gallium Nitride and Silicon Carbide Power Technologies 11
PublisherIOP Publishing Ltd
Pages57-64
Number of pages8
Edition7
ISBN (Electronic)9781607685395
DOIs
StatePublished - 2021
Event240th ECS Meeting - Orlando, United States
Duration: Oct 10 2021Oct 14 2021

Publication series

NameECS Transactions
Number7
Volume104
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

Conference240th ECS Meeting
Country/TerritoryUnited States
CityOrlando
Period10/10/2110/14/21

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