TY - GEN
T1 - Prismatic Slip in AlN Crystals Grown by PVT
AU - Hu, Shanshan
AU - Fang, Haoyan
AU - Liu, Yafei
AU - Peng, Hongyu
AU - Ailihumaer, Tuerxun
AU - Cheng, Qianyu
AU - Chen, Zeyu
AU - Dalmau, Rafael
AU - Britt, Jeffrey
AU - Schlesser, Raoul
AU - Raghothamachar, Balaji
AU - Dudley, Michael
N1 - Publisher Copyright:
© 2021 ECS - The Electrochemical Society.
PY - 2021
Y1 - 2021
N2 - Basal plane slip is the most frequently observed deformation mechanism in hexagonal aluminum nitride (AlN) crystals grown by the physical vapor transport (PVT) method. However, prismatic slip can also take place in such crystals. In this study, slip in the three prismatic slip systems with nonuniform distributions, observed in a commercial 50 mm AlN substrate wafer, was investigated. The nonuniformity was attributed to the distribution of resolved shear stress in each prismatic slip system caused by radial thermal gradients in the growing crystal boule. A radial thermal model was established to quantitively estimate the thermal stress across the area of the crystal boule during PVT growth. The model results correlated well with both the experimental observations and theoretical calculations of the critical resolved shear stress, revealing that radial thermal gradients play a key role in activating prismatic slip during AlN bulk growth.
AB - Basal plane slip is the most frequently observed deformation mechanism in hexagonal aluminum nitride (AlN) crystals grown by the physical vapor transport (PVT) method. However, prismatic slip can also take place in such crystals. In this study, slip in the three prismatic slip systems with nonuniform distributions, observed in a commercial 50 mm AlN substrate wafer, was investigated. The nonuniformity was attributed to the distribution of resolved shear stress in each prismatic slip system caused by radial thermal gradients in the growing crystal boule. A radial thermal model was established to quantitively estimate the thermal stress across the area of the crystal boule during PVT growth. The model results correlated well with both the experimental observations and theoretical calculations of the critical resolved shear stress, revealing that radial thermal gradients play a key role in activating prismatic slip during AlN bulk growth.
UR - https://www.scopus.com/pages/publications/85117918493
U2 - 10.1149/10407.0057ecst
DO - 10.1149/10407.0057ecst
M3 - Conference contribution
AN - SCOPUS:85117918493
T3 - ECS Transactions
SP - 57
EP - 64
BT - 240th ECS Meeting - Gallium Nitride and Silicon Carbide Power Technologies 11
PB - IOP Publishing Ltd
T2 - 240th ECS Meeting
Y2 - 10 October 2021 through 14 October 2021
ER -