Process-induced deformations and stacking faults in 4H-SiC

Robert S. Okojie; Xianrong Huang; Michael Dudley; Ming Zhang; Pirouz Pirouz

doi:10.1557/proc-0911-b07-02

Process-induced deformations and stacking faults in 4H-SiC

Robert S. Okojie
, Xianrong Huang
, Michael Dudley
, Ming Zhang
, Pirouz Pirouz

Materials Science and Engineering

National Aeronautics and Space Administration
Stony Brook University
Case Western Reserve University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Scopus citations

Abstract

We used Film Stress Measurement (FSM), Transmission Electron Microscopy (TEM), and High-Resolution X-ray Diffraction (HRXRD) techniques to obtain further knowledge with respect to the deformation, warpage, and stacking faults (SF's) that are induced in n-type 4H-S1C wafers and epilayers when subjected to mechanical polishing and high temperature (1150 °C) processing.

Original language	English
Title of host publication	Silicon Carbide 2006 - Materials, Processing and Devices
Publisher	Materials Research Society
Pages	145-150
Number of pages	6
ISBN (Print)	1558998721, 9781558998728
DOIs	https://doi.org/10.1557/proc-0911-b07-02
State	Published - 2006
Event	2006 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 18 2006 → Apr 20 2006

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	911
ISSN (Print)	0272-9172

Conference

Conference	2006 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	04/18/06 → 04/20/06

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10.1557/proc-0911-b07-02

Cite this

@inproceedings{27adccb733a746a5ad58afcb70aedd1f,

title = "Process-induced deformations and stacking faults in 4H-SiC",

abstract = "We used Film Stress Measurement (FSM), Transmission Electron Microscopy (TEM), and High-Resolution X-ray Diffraction (HRXRD) techniques to obtain further knowledge with respect to the deformation, warpage, and stacking faults (SF's) that are induced in n-type 4H-S1C wafers and epilayers when subjected to mechanical polishing and high temperature (1150 °C) processing.",

author = "Okojie, \{Robert S.\} and Xianrong Huang and Michael Dudley and Ming Zhang and Pirouz Pirouz",

year = "2006",

doi = "10.1557/proc-0911-b07-02",

language = "English",

isbn = "1558998721",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "145--150",

booktitle = "Silicon Carbide 2006 - Materials, Processing and Devices",

note = "2006 MRS Spring Meeting ; Conference date: 18-04-2006 Through 20-04-2006",

}

Okojie, RS, Huang, X, Dudley, M, Zhang, M & Pirouz, P 2006, Process-induced deformations and stacking faults in 4H-SiC. in Silicon Carbide 2006 - Materials, Processing and Devices. Materials Research Society Symposium Proceedings, vol. 911, Materials Research Society, pp. 145-150, 2006 MRS Spring Meeting, San Francisco, CA, United States, 04/18/06. https://doi.org/10.1557/proc-0911-b07-02

Process-induced deformations and stacking faults in 4H-SiC. / Okojie, Robert S.; Huang, Xianrong; Dudley, Michael et al.
Silicon Carbide 2006 - Materials, Processing and Devices. Materials Research Society, 2006. p. 145-150 (Materials Research Society Symposium Proceedings; Vol. 911).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Process-induced deformations and stacking faults in 4H-SiC

AU - Okojie, Robert S.

AU - Huang, Xianrong

AU - Dudley, Michael

AU - Zhang, Ming

AU - Pirouz, Pirouz

PY - 2006

Y1 - 2006

N2 - We used Film Stress Measurement (FSM), Transmission Electron Microscopy (TEM), and High-Resolution X-ray Diffraction (HRXRD) techniques to obtain further knowledge with respect to the deformation, warpage, and stacking faults (SF's) that are induced in n-type 4H-S1C wafers and epilayers when subjected to mechanical polishing and high temperature (1150 °C) processing.

AB - We used Film Stress Measurement (FSM), Transmission Electron Microscopy (TEM), and High-Resolution X-ray Diffraction (HRXRD) techniques to obtain further knowledge with respect to the deformation, warpage, and stacking faults (SF's) that are induced in n-type 4H-S1C wafers and epilayers when subjected to mechanical polishing and high temperature (1150 °C) processing.

UR - https://www.scopus.com/pages/publications/33750308909

U2 - 10.1557/proc-0911-b07-02

DO - 10.1557/proc-0911-b07-02

M3 - Conference contribution

AN - SCOPUS:33750308909

SN - 1558998721

SN - 9781558998728

T3 - Materials Research Society Symposium Proceedings

SP - 145

EP - 150

BT - Silicon Carbide 2006 - Materials, Processing and Devices

PB - Materials Research Society

T2 - 2006 MRS Spring Meeting

Y2 - 18 April 2006 through 20 April 2006

ER -

Process-induced deformations and stacking faults in 4H-SiC

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