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Producibility improvements suggested by a validated process model of seeded CdZnTe vertical Bridgman growth

  • David J. Larson
  • , Louis G. Casagrande
  • , Don Di Marzio
  • , A. Levy
  • , F. M. Carlson
  • , Taipao Lee
  • , David R. Black
  • , Jun Wu
  • , Michael Dudley
  • Northrop Grumman

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

We have successfully validated theoretical models of seeded vertical Bridgman-Stockbarger CdZnTe crystal growth and post-solidification processing, using in-situ thermal monitoring and innovative material characterization techniques. The models predict the thermal gradients, interface shape, fluid flow and solute redistribution during solidification, as well as the distributions of accumulated excess stress that causes defect generation and redistribution. Data from the furnace and ampoule wall have validated predictions from the thermal model. Results are compared to predictions of the thermal and thermo-solutal models. We explain the measured initial, change-of-rate, and terminal compositional transients as well as the macrosegregation. Macro and micro-defect distributions have been imaged on CdZnTe wafers from 40 mm diameter boules. Superposition of topographic defect images and predicted excess stress patterns suggests the origin of some frequently encountered defects, particularly on a macro scale, to result from the applied and accumulated stress fields and the anisotropic nature of the CdZnTe crystal. Implications of these findings with respect to producibility are discussed.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsHerbert K. Pollehn, Ray Balcerak
PublisherPubl by Society of Photo-Optical Instrumentation Engineers
Pages11-20
Number of pages10
ISBN (Print)0819415324
StatePublished - 1994
EventProducibility of II-VI Materials and Devices - Orlando, FL, USA
Duration: Apr 6 1994Apr 8 1994

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2228
ISSN (Print)0277-786X

Conference

ConferenceProducibility of II-VI Materials and Devices
CityOrlando, FL, USA
Period04/6/9404/8/94

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