Progress in bulk 4H SiC crystal growth for 150 mm wafer production

Ian Manning; Yusuke Matsuda; Gilyong Chung; Edward Sanchez; Michael Dudley; Tuerxun Ailihumaer; Balaji Raghothamachar

doi:10.4028/www.scientific.net/MSF.1004.37

Progress in bulk 4H SiC crystal growth for 150 mm wafer production

Ian Manning
, Yusuke Matsuda
, Gilyong Chung
, Edward Sanchez
, Michael Dudley
, Tuerxun Ailihumaer
, Balaji Raghothamachar

Materials Science and Engineering

Compound Semiconductor Solutions
DuPont
Stony Brook University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

23 Scopus citations

Abstract

The thermoelastic stress, mechanical properties and defect content of bulk 4H n-type SiC crystals were investigated following adjustments to the PVT growth cell configuration that led to a 40% increase in growth rate. The resulting 150 mm wafers were compared with wafers produced from a control process in terms of wafer bow and warp, and dislocation density. Wafer shape was found to be comparable among the processes, indicating minimal impact on internal stress. Threading edge and threading screw dislocation densities increased and decreased, respectively, while basal plane dislocation densities were unaffected by the increase in growth rate. Loss of wafer planar stability was observed in certain cases. The elastic modulus was measured to be in the range of approximately 420-450 GPa for selected stable and unstable wafers, and was found to correspond to resistivity.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2019
Editors	Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka
Publisher	Trans Tech Publications Ltd
Pages	37-43
Number of pages	7
ISBN (Print)	9783035715798
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.1004.37
State	Published - 2020
Event	18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 - Kyoto, Japan Duration: Sep 29 2019 → Oct 4 2019

Publication series

Name	Materials Science Forum
Volume	1004 MSF
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Conference

Conference	18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019
Country/Territory	Japan
City	Kyoto
Period	09/29/19 → 10/4/19

Keywords

4H SiC
Elastic modulus
Growth rate
Internal stress
KOH etching
Nanoindentation
Resistivity
Wafer bow
Wafer warp
X-ray topography

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10.4028/www.scientific.net/MSF.1004.37

Cite this

Manning, I., Matsuda, Y., Chung, G., Sanchez, E., Dudley, M., Ailihumaer, T., & Raghothamachar, B. (2020). Progress in bulk 4H SiC crystal growth for 150 mm wafer production. In H. Yano, T. Ohshima, K. Eto, T. Mitani, S. Harada, & Y. Tanaka (Eds.), Silicon Carbide and Related Materials 2019 (pp. 37-43). (Materials Science Forum; Vol. 1004 MSF). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.1004.37

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title = "Progress in bulk 4H SiC crystal growth for 150 mm wafer production",

abstract = "The thermoelastic stress, mechanical properties and defect content of bulk 4H n-type SiC crystals were investigated following adjustments to the PVT growth cell configuration that led to a 40\% increase in growth rate. The resulting 150 mm wafers were compared with wafers produced from a control process in terms of wafer bow and warp, and dislocation density. Wafer shape was found to be comparable among the processes, indicating minimal impact on internal stress. Threading edge and threading screw dislocation densities increased and decreased, respectively, while basal plane dislocation densities were unaffected by the increase in growth rate. Loss of wafer planar stability was observed in certain cases. The elastic modulus was measured to be in the range of approximately 420-450 GPa for selected stable and unstable wafers, and was found to correspond to resistivity.",

keywords = "4H SiC, Elastic modulus, Growth rate, Internal stress, KOH etching, Nanoindentation, Resistivity, Wafer bow, Wafer warp, X-ray topography",

author = "Ian Manning and Yusuke Matsuda and Gilyong Chung and Edward Sanchez and Michael Dudley and Tuerxun Ailihumaer and Balaji Raghothamachar",

note = "Publisher Copyright: {\textcopyright} 2020 Trans Tech Publications Ltd, Switzerland.; 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 ; Conference date: 29-09-2019 Through 04-10-2019",

year = "2020",

doi = "10.4028/www.scientific.net/MSF.1004.37",

language = "English",

isbn = "9783035715798",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

pages = "37--43",

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booktitle = "Silicon Carbide and Related Materials 2019",

}

Manning, I, Matsuda, Y, Chung, G, Sanchez, E, Dudley, M, Ailihumaer, T & Raghothamachar, B 2020, Progress in bulk 4H SiC crystal growth for 150 mm wafer production. in H Yano, T Ohshima, K Eto, T Mitani, S Harada & Y Tanaka (eds), Silicon Carbide and Related Materials 2019. Materials Science Forum, vol. 1004 MSF, Trans Tech Publications Ltd, pp. 37-43, 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019, Kyoto, Japan, 09/29/19. https://doi.org/10.4028/www.scientific.net/MSF.1004.37

Progress in bulk 4H SiC crystal growth for 150 mm wafer production. / Manning, Ian; Matsuda, Yusuke; Chung, Gilyong et al.
Silicon Carbide and Related Materials 2019. ed. / Hiroshi Yano; Takeshi Ohshima; Kazuma Eto; Takeshi Mitani; Shinsuke Harada; Yasunori Tanaka. Trans Tech Publications Ltd, 2020. p. 37-43 (Materials Science Forum; Vol. 1004 MSF).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Progress in bulk 4H SiC crystal growth for 150 mm wafer production

AU - Manning, Ian

AU - Matsuda, Yusuke

AU - Chung, Gilyong

AU - Sanchez, Edward

AU - Dudley, Michael

AU - Ailihumaer, Tuerxun

AU - Raghothamachar, Balaji

PY - 2020

Y1 - 2020

N2 - The thermoelastic stress, mechanical properties and defect content of bulk 4H n-type SiC crystals were investigated following adjustments to the PVT growth cell configuration that led to a 40% increase in growth rate. The resulting 150 mm wafers were compared with wafers produced from a control process in terms of wafer bow and warp, and dislocation density. Wafer shape was found to be comparable among the processes, indicating minimal impact on internal stress. Threading edge and threading screw dislocation densities increased and decreased, respectively, while basal plane dislocation densities were unaffected by the increase in growth rate. Loss of wafer planar stability was observed in certain cases. The elastic modulus was measured to be in the range of approximately 420-450 GPa for selected stable and unstable wafers, and was found to correspond to resistivity.

AB - The thermoelastic stress, mechanical properties and defect content of bulk 4H n-type SiC crystals were investigated following adjustments to the PVT growth cell configuration that led to a 40% increase in growth rate. The resulting 150 mm wafers were compared with wafers produced from a control process in terms of wafer bow and warp, and dislocation density. Wafer shape was found to be comparable among the processes, indicating minimal impact on internal stress. Threading edge and threading screw dislocation densities increased and decreased, respectively, while basal plane dislocation densities were unaffected by the increase in growth rate. Loss of wafer planar stability was observed in certain cases. The elastic modulus was measured to be in the range of approximately 420-450 GPa for selected stable and unstable wafers, and was found to correspond to resistivity.

KW - 4H SiC

KW - Elastic modulus

KW - Growth rate

KW - Internal stress

KW - KOH etching

KW - Nanoindentation

KW - Resistivity

KW - Wafer bow

KW - Wafer warp

KW - X-ray topography

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DO - 10.4028/www.scientific.net/MSF.1004.37

M3 - Conference contribution

AN - SCOPUS:85089797635

SN - 9783035715798

T3 - Materials Science Forum

SP - 37

EP - 43

BT - Silicon Carbide and Related Materials 2019

A2 - Yano, Hiroshi

A2 - Ohshima, Takeshi

A2 - Eto, Kazuma

A2 - Mitani, Takeshi

A2 - Harada, Shinsuke

A2 - Tanaka, Yasunori

PB - Trans Tech Publications Ltd

T2 - 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019

Y2 - 29 September 2019 through 4 October 2019

ER -

Progress in bulk 4H SiC crystal growth for 150 mm wafer production

Abstract

Publication series

Conference

Keywords

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