Properties of unrelaxed InAs1-XSbX alloys grown on compositionally graded buffers

G. Belenky; D. Donetsky; G. Kipshidze; D. Wang; L. Shterengas; W. L. Sarney; S. P. Svensson

doi:10.1063/1.3650473

Properties of unrelaxed InAs_1-XSb_X alloys grown on compositionally graded buffers

G. Belenky
, D. Donetsky
, G. Kipshidze
, D. Wang
, L. Shterengas
, W. L. Sarney
, S. P. Svensson

Electrical Engineering

Stony Brook University
U.S. Army Research Laboratory

Research output: Contribution to journal › Article › peer-review

66 Scopus citations

Abstract

Unrelaxed InAs_1-xSb_x layers with lattice constants up to 2.1 larger than that of GaSb substrates were grown by molecular beam epitaxy on GaInSb and AlGaInSb compositionally graded buffer layers. The topmost section of the buffers was unrelaxed but strained. The in-plane lattice constant of the top buffer layer was grown to be equal to the lattice constant of unrelaxed and unstrained InAs_1-xSb_x with given X. The InAs_0.56Sb_0.44 layers demonstrate photoluminescence peak at 9.4 m at 150 K. The minority carrier lifetime measured at 77 K for InAs _0.8Sb_0.2 was 250 ns.

Original language	English
Article number	141116
Journal	Applied Physics Letters
Volume	99
Issue number	14
DOIs	https://doi.org/10.1063/1.3650473
State	Published - Oct 3 2011

Access to Document

10.1063/1.3650473

Cite this

@article{cb92545c78e6435486b8fbb9d7bc8376,

title = "Properties of unrelaxed InAs1-XSbX alloys grown on compositionally graded buffers",

abstract = "Unrelaxed InAs1-xSbx layers with lattice constants up to 2.1 larger than that of GaSb substrates were grown by molecular beam epitaxy on GaInSb and AlGaInSb compositionally graded buffer layers. The topmost section of the buffers was unrelaxed but strained. The in-plane lattice constant of the top buffer layer was grown to be equal to the lattice constant of unrelaxed and unstrained InAs1-xSbx with given X. The InAs0.56Sb0.44 layers demonstrate photoluminescence peak at 9.4 m at 150 K. The minority carrier lifetime measured at 77 K for InAs 0.8Sb0.2 was 250 ns.",

author = "G. Belenky and D. Donetsky and G. Kipshidze and D. Wang and L. Shterengas and Sarney, \{W. L.\} and Svensson, \{S. P.\}",

year = "2011",

month = oct,

day = "3",

doi = "10.1063/1.3650473",

language = "English",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "14",

}

TY - JOUR

T1 - Properties of unrelaxed InAs1-XSbX alloys grown on compositionally graded buffers

AU - Belenky, G.

AU - Donetsky, D.

AU - Kipshidze, G.

AU - Wang, D.

AU - Shterengas, L.

AU - Sarney, W. L.

AU - Svensson, S. P.

PY - 2011/10/3

Y1 - 2011/10/3

N2 - Unrelaxed InAs1-xSbx layers with lattice constants up to 2.1 larger than that of GaSb substrates were grown by molecular beam epitaxy on GaInSb and AlGaInSb compositionally graded buffer layers. The topmost section of the buffers was unrelaxed but strained. The in-plane lattice constant of the top buffer layer was grown to be equal to the lattice constant of unrelaxed and unstrained InAs1-xSbx with given X. The InAs0.56Sb0.44 layers demonstrate photoluminescence peak at 9.4 m at 150 K. The minority carrier lifetime measured at 77 K for InAs 0.8Sb0.2 was 250 ns.

AB - Unrelaxed InAs1-xSbx layers with lattice constants up to 2.1 larger than that of GaSb substrates were grown by molecular beam epitaxy on GaInSb and AlGaInSb compositionally graded buffer layers. The topmost section of the buffers was unrelaxed but strained. The in-plane lattice constant of the top buffer layer was grown to be equal to the lattice constant of unrelaxed and unstrained InAs1-xSbx with given X. The InAs0.56Sb0.44 layers demonstrate photoluminescence peak at 9.4 m at 150 K. The minority carrier lifetime measured at 77 K for InAs 0.8Sb0.2 was 250 ns.

UR - https://www.scopus.com/pages/publications/80053997832

U2 - 10.1063/1.3650473

DO - 10.1063/1.3650473

M3 - Article

AN - SCOPUS:80053997832

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 141116

ER -

Properties of unrelaxed InAs_1-XSb_X alloys grown on compositionally graded buffers

Abstract

Access to Document

Other files and links

Fingerprint

Cite this