Proposed triple-wall, voltage-isolating electrodes for multiple-bias- voltage 3D sensors

Sherwood Parker; N. V. Mokhov; I. L. Rakhno; I. S. Tropin; Cinzia Davia; S. Seidel; M. Hoeferkamp; J. Metcalfe; Rui Wang; Christopher Kenney; Jasmine Hasi; Philippe Grenier

doi:10.1016/j.nima.2012.04.073

Proposed triple-wall, voltage-isolating electrodes for multiple-bias- voltage 3D sensors

Sherwood Parker
, N. V. Mokhov
, I. L. Rakhno
, I. S. Tropin
, Cinzia Davia
, S. Seidel
, M. Hoeferkamp
, J. Metcalfe
, Rui Wang
, Christopher Kenney
, Jasmine Hasi
, Philippe Grenier

Physics and Astronomy

University of Hawai'i at Mānoa
Fermi National Accelerator Laboratory
University of New Mexico
SLAC National Accelerator Laboratory

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Dividing 3D active-edge silicon sensors into separate sections with a triple-wall sandwich of two trench electrodes separated by an insulating layer, will allow two or more bias voltages to be used simultaneously. Such sensors could be fabricated with only a single group of low-temperature additional steps and may be necessary to prevent a new form of radiation-damage failure in non-uniform radiation fields.

Original language	English
Pages (from-to)	98-103
Number of pages	6
Journal	Nuclear Inst. and Methods in Physics Research, A
Volume	685
DOIs	https://doi.org/10.1016/j.nima.2012.04.073
State	Published - Sep 1 2012

Keywords

3D silicon detectors
Active edges
Forward proton tagging
Non-uniform irradiation
Radiation hardness
Triple-wall electrodes

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10.1016/j.nima.2012.04.073

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title = "Proposed triple-wall, voltage-isolating electrodes for multiple-bias- voltage 3D sensors",

abstract = "Dividing 3D active-edge silicon sensors into separate sections with a triple-wall sandwich of two trench electrodes separated by an insulating layer, will allow two or more bias voltages to be used simultaneously. Such sensors could be fabricated with only a single group of low-temperature additional steps and may be necessary to prevent a new form of radiation-damage failure in non-uniform radiation fields.",

keywords = "3D silicon detectors, Active edges, Forward proton tagging, Non-uniform irradiation, Radiation hardness, Triple-wall electrodes",

author = "Sherwood Parker and Mokhov, \{N. V.\} and Rakhno, \{I. L.\} and Tropin, \{I. S.\} and Cinzia Davia and S. Seidel and M. Hoeferkamp and J. Metcalfe and Rui Wang and Christopher Kenney and Jasmine Hasi and Philippe Grenier",

year = "2012",

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doi = "10.1016/j.nima.2012.04.073",

language = "English",

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journal = "Nuclear Inst. and Methods in Physics Research, A",

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TY - JOUR

T1 - Proposed triple-wall, voltage-isolating electrodes for multiple-bias- voltage 3D sensors

AU - Parker, Sherwood

AU - Mokhov, N. V.

AU - Rakhno, I. L.

AU - Tropin, I. S.

AU - Davia, Cinzia

AU - Seidel, S.

AU - Hoeferkamp, M.

AU - Metcalfe, J.

AU - Wang, Rui

AU - Kenney, Christopher

AU - Hasi, Jasmine

AU - Grenier, Philippe

PY - 2012/9/1

Y1 - 2012/9/1

N2 - Dividing 3D active-edge silicon sensors into separate sections with a triple-wall sandwich of two trench electrodes separated by an insulating layer, will allow two or more bias voltages to be used simultaneously. Such sensors could be fabricated with only a single group of low-temperature additional steps and may be necessary to prevent a new form of radiation-damage failure in non-uniform radiation fields.

AB - Dividing 3D active-edge silicon sensors into separate sections with a triple-wall sandwich of two trench electrodes separated by an insulating layer, will allow two or more bias voltages to be used simultaneously. Such sensors could be fabricated with only a single group of low-temperature additional steps and may be necessary to prevent a new form of radiation-damage failure in non-uniform radiation fields.

KW - 3D silicon detectors

KW - Active edges

KW - Forward proton tagging

KW - Non-uniform irradiation

KW - Radiation hardness

KW - Triple-wall electrodes

UR - https://www.scopus.com/pages/publications/84862218294

U2 - 10.1016/j.nima.2012.04.073

DO - 10.1016/j.nima.2012.04.073

M3 - Article

AN - SCOPUS:84862218294

SN - 0168-9002

VL - 685

SP - 98

EP - 103

JO - Nuclear Inst. and Methods in Physics Research, A

JF - Nuclear Inst. and Methods in Physics Research, A

ER -

Proposed triple-wall, voltage-isolating electrodes for multiple-bias- voltage 3D sensors

Abstract

Keywords

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