PVT growth of 6H SiC crystals and defect characterization

Govindhan Dhanaraj; Feng Liu; Michael Dudley; Hui Zhang; Vish Prasad

doi:10.1557/proc-815-j5.31

PVT growth of 6H SiC crystals and defect characterization

Govindhan Dhanaraj
, Feng Liu
, Michael Dudley
, Hui Zhang
, Vish Prasad

Materials Science and Engineering

Stony Brook University
Florida International University

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

SiC single crystals have been grown by seeded sublimation method using physical vapor transport (PVT) system designed and fabricated in our laboratory. A novel multi-segmented graphite insulation has been used for improved heat containment in the hot-zone. Numerical modeling was used to obtain the temperature field and predict various growth parameters. The grown crystals were characterized using AFM, SWBXT and chemical etching.

Original language	English
Pages (from-to)	27-32
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	815
DOIs	https://doi.org/10.1557/proc-815-j5.31
State	Published - 2004
Event	Silicon Carbide 2004 - Materials, Processing and Devices - San Francisco, CA, United States Duration: Apr 14 2004 → Apr 15 2004

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@article{e8916ced30e04e47ba914161eb627141,

title = "PVT growth of 6H SiC crystals and defect characterization",

abstract = "SiC single crystals have been grown by seeded sublimation method using physical vapor transport (PVT) system designed and fabricated in our laboratory. A novel multi-segmented graphite insulation has been used for improved heat containment in the hot-zone. Numerical modeling was used to obtain the temperature field and predict various growth parameters. The grown crystals were characterized using AFM, SWBXT and chemical etching.",

author = "Govindhan Dhanaraj and Feng Liu and Michael Dudley and Hui Zhang and Vish Prasad",

year = "2004",

doi = "10.1557/proc-815-j5.31",

language = "English",

volume = "815",

pages = "27--32",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Silicon Carbide 2004 - Materials, Processing and Devices ; Conference date: 14-04-2004 Through 15-04-2004",

}

TY - JOUR

T1 - PVT growth of 6H SiC crystals and defect characterization

AU - Dhanaraj, Govindhan

AU - Liu, Feng

AU - Dudley, Michael

AU - Zhang, Hui

AU - Prasad, Vish

PY - 2004

Y1 - 2004

N2 - SiC single crystals have been grown by seeded sublimation method using physical vapor transport (PVT) system designed and fabricated in our laboratory. A novel multi-segmented graphite insulation has been used for improved heat containment in the hot-zone. Numerical modeling was used to obtain the temperature field and predict various growth parameters. The grown crystals were characterized using AFM, SWBXT and chemical etching.

AB - SiC single crystals have been grown by seeded sublimation method using physical vapor transport (PVT) system designed and fabricated in our laboratory. A novel multi-segmented graphite insulation has been used for improved heat containment in the hot-zone. Numerical modeling was used to obtain the temperature field and predict various growth parameters. The grown crystals were characterized using AFM, SWBXT and chemical etching.

UR - https://www.scopus.com/pages/publications/12844264839

U2 - 10.1557/proc-815-j5.31

DO - 10.1557/proc-815-j5.31

M3 - Conference article

AN - SCOPUS:12844264839

SN - 0272-9172

VL - 815

SP - 27

EP - 32

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Silicon Carbide 2004 - Materials, Processing and Devices

Y2 - 14 April 2004 through 15 April 2004

ER -

PVT growth of 6H SiC crystals and defect characterization

Abstract

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