Quantum materials based on metamorphic InAsSb

S. Suchalkin; G. Belenky; M. Ermolaev; B. Laikhtman; G. Kipshidze; D. Smirnov; S. Moon; T. Valla; S. Svensson; W. Sarney

doi:10.1109/RAPID.2019.8864362

Quantum materials based on metamorphic InAsSb

S. Suchalkin
, G. Belenky
, M. Ermolaev
, B. Laikhtman
, G. Kipshidze
, D. Smirnov
, S. Moon
, T. Valla
, S. Svensson
, W. Sarney

Electrical Engineering

Stony Brook University
Hebrew University of Jerusalem
National High Magnetic Field Laboratory
Florida State University
Brookhaven National Laboratory
U.S. Army Research Laboratory

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Bandgap and carrier dispersion in superlattices (SL) based on InAsSb can be precisely controlled by variation of the layer composition and width. However, when grown strain-balanced on GaSb, possible SL designs are seriously limited. The virtual substrate approach on the other hand removes this limitation thus opening a way to design SLs and QWs with non-generic electronic properties including Dirac carrier dispersion and topologically nontrivial states.

Original language	English
Title of host publication	2019 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2019 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728106021
DOIs	https://doi.org/10.1109/RAPID.2019.8864362
State	Published - Aug 2019
Event	2019 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2019 - Miramar Beach, United States Duration: Aug 19 2019 → Aug 21 2019

Publication series

Name	2019 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2019 - Proceedings

Conference

Conference	2019 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2019
Country/Territory	United States
City	Miramar Beach
Period	08/19/19 → 08/21/19

Access to Document

10.1109/RAPID.2019.8864362

Cite this

Suchalkin, S., Belenky, G., Ermolaev, M., Laikhtman, B., Kipshidze, G., Smirnov, D., Moon, S., Valla, T., Svensson, S., & Sarney, W. (2019). Quantum materials based on metamorphic InAsSb. In 2019 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2019 - Proceedings Article 8864362 (2019 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RAPID.2019.8864362

@inproceedings{a315c8c5fb82417389a043c92cb64a67,

title = "Quantum materials based on metamorphic InAsSb",

abstract = "Bandgap and carrier dispersion in superlattices (SL) based on InAsSb can be precisely controlled by variation of the layer composition and width. However, when grown strain-balanced on GaSb, possible SL designs are seriously limited. The virtual substrate approach on the other hand removes this limitation thus opening a way to design SLs and QWs with non-generic electronic properties including Dirac carrier dispersion and topologically nontrivial states.",

author = "S. Suchalkin and G. Belenky and M. Ermolaev and B. Laikhtman and G. Kipshidze and D. Smirnov and S. Moon and T. Valla and S. Svensson and W. Sarney",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2019 ; Conference date: 19-08-2019 Through 21-08-2019",

year = "2019",

month = aug,

doi = "10.1109/RAPID.2019.8864362",

language = "English",

series = "2019 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2019 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2019 - Proceedings",

}

Suchalkin, S, Belenky, G, Ermolaev, M, Laikhtman, B, Kipshidze, G, Smirnov, D, Moon, S, Valla, T, Svensson, S & Sarney, W 2019, Quantum materials based on metamorphic InAsSb. in 2019 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2019 - Proceedings., 8864362, 2019 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2019, Miramar Beach, United States, 08/19/19. https://doi.org/10.1109/RAPID.2019.8864362

Quantum materials based on metamorphic InAsSb. / Suchalkin, S.; Belenky, G.; Ermolaev, M. et al.
2019 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8864362 (2019 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2019 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Quantum materials based on metamorphic InAsSb

AU - Suchalkin, S.

AU - Belenky, G.

AU - Ermolaev, M.

AU - Laikhtman, B.

AU - Kipshidze, G.

AU - Smirnov, D.

AU - Moon, S.

AU - Valla, T.

AU - Svensson, S.

AU - Sarney, W.

PY - 2019/8

Y1 - 2019/8

N2 - Bandgap and carrier dispersion in superlattices (SL) based on InAsSb can be precisely controlled by variation of the layer composition and width. However, when grown strain-balanced on GaSb, possible SL designs are seriously limited. The virtual substrate approach on the other hand removes this limitation thus opening a way to design SLs and QWs with non-generic electronic properties including Dirac carrier dispersion and topologically nontrivial states.

AB - Bandgap and carrier dispersion in superlattices (SL) based on InAsSb can be precisely controlled by variation of the layer composition and width. However, when grown strain-balanced on GaSb, possible SL designs are seriously limited. The virtual substrate approach on the other hand removes this limitation thus opening a way to design SLs and QWs with non-generic electronic properties including Dirac carrier dispersion and topologically nontrivial states.

UR - https://www.scopus.com/pages/publications/85074270559

U2 - 10.1109/RAPID.2019.8864362

DO - 10.1109/RAPID.2019.8864362

M3 - Conference contribution

AN - SCOPUS:85074270559

T3 - 2019 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2019 - Proceedings

BT - 2019 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2019 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2019

Y2 - 19 August 2019 through 21 August 2019

ER -

Suchalkin S, Belenky G, Ermolaev M, Laikhtman B, Kipshidze G, Smirnov D et al. Quantum materials based on metamorphic InAsSb. In 2019 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8864362. (2019 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2019 - Proceedings). doi: 10.1109/RAPID.2019.8864362

Quantum materials based on metamorphic InAsSb

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