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Quantum-Well Bound States in Graphene Heterostructure Interfaces

  • Zhongwei Dai
  • , Zhaoli Gao
  • , Sergey S. Pershoguba
  • , Nikhil Tiwale
  • , Ashwanth Subramanian
  • , Qicheng Zhang
  • , Calley Eads
  • , Samuel A. Tenney
  • , Richard M. Osgood
  • , Chang Yong Nam
  • , Jiadong Zang
  • , A. T.Charlie Johnson
  • , Jerzy T. Sadowski
  • Brookhaven National Laboratory
  • University of Pennsylvania
  • Chinese University of Hong Kong
  • University of New Hampshire
  • Stony Brook University
  • Columbia University

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

We present experimental evidence of electronic and optical interlayer resonances in graphene van der Waals heterostructure interfaces. Using the spectroscopic mode of a low-energy electron microscope (LEEM), we characterized these interlayer resonant states up to 10 eV above the vacuum level. Compared with nontwisted, AB-stacked bilayer graphene (AB BLG), an ≈0.2 Å increase was found in the interlayer spacing of 30° twisted bilayer graphene (30°-tBLG). In addition, we used Raman spectroscopy to probe the inelastic light-matter interactions. A unique type of Fano resonance was found around the D and G modes of the graphene lattice vibrations. This anomalous, robust Fano resonance is a direct result of quantum confinement and the interplay between discrete phonon states and the excitonic continuum.

Original languageEnglish
Article number086805
JournalPhysical Review Letters
Volume127
Issue number8
DOIs
StatePublished - Aug 20 2021

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