Quaternary InGaAsSb thermophotovoltaic diodes

Michael W. Dashiell; John F. Beausang; Hassan Ehsani; G. J. Nichols; David M. Depoy; Lee R. Danielson; Phil Talamo; Kevin D. Rahner; Edward J. Brown; Steven R. Burger; Patrick M. Fourspring; William F. Topper; P. F. Baldasaro; Christine A. Wang; Robin K. Huang; Michael K. Connors; George W. Turner; Zane A. Shellenbarger; Gordon Taylor; Jizhong Li; Ramon Martinelli; Dmitry Donetski; Sergei Anikeev; Gregory L. Belenky; Serge Luryi

doi:10.1109/TED.2006.885087

Quaternary InGaAsSb thermophotovoltaic diodes

Michael W. Dashiell
, John F. Beausang
, Hassan Ehsani
, G. J. Nichols
, David M. Depoy
, Lee R. Danielson
, Phil Talamo
, Kevin D. Rahner
, Edward J. Brown
, Steven R. Burger
, Patrick M. Fourspring
, William F. Topper
, P. F. Baldasaro
, Christine A. Wang
, Robin K. Huang
, Michael K. Connors
, George W. Turner
, Zane A. Shellenbarger
, Gordon Taylor
, Jizhong Li

Ramon Martinelli, Dmitry Donetski, Sergei Anikeev, Gregory L. Belenky, Serge Luryi

Electrical Engineering

Lockheed Martin
Massachusetts Institute of Technology
IEEE
Sarnoff Corporation
Lehigh University
Stony Brook University

Research output: Contribution to journal › Article › peer-review

144 Scopus citations

Abstract

In_x Ga1_-x AS_y Sbi_1-v thermophotovoltaic (TPV) diodes were grown lattice matched to GaSb substrates by metalorganic vapor phase epitaxy in the bandgap range of E_G = 0.5 to 0.6 eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density (PD) of ηTPV = 19.7% and PD = 0.58 W/cm², respectively, for a radiator temperature of T_radiotor = 950 °C, diode temperature of T_dlode = 27 °C, and diode bandgap of E_G = 0.53 eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters which for 0.53-eV InGaAsSb TPV energy conversion are ηTPV = 28% and PD = 0.85 W/cm² at the above operating temperatures. The most severe performance limits are imposed by 1) diode open-circuit voltage (V_oc) limits due to intrinsic Auger recombination and 2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V_oc is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance versus diode architecture indicates that V _oc and thus efficiency are limited by extrinsic recombination processes such as through bulk defects.

Original language	English
Pages (from-to)	2879-2888
Number of pages	10
Journal	IEEE Transactions on Electron Devices
Volume	53
Issue number	12
DOIs	https://doi.org/10.1109/TED.2006.885087
State	Published - Dec 2006

Keywords

Diodes
Indium gallium arsenide antimonide
Photovoltaic

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10.1109/TED.2006.885087

Cite this

Dashiell, M. W., Beausang, J. F., Ehsani, H., Nichols, G. J., Depoy, D. M., Danielson, L. R., Talamo, P., Rahner, K. D., Brown, E. J., Burger, S. R., Fourspring, P. M., Topper, W. F., Baldasaro, P. F., Wang, C. A., Huang, R. K., Connors, M. K., Turner, G. W., Shellenbarger, Z. A., Taylor, G., ... Luryi, S. (2006). Quaternary InGaAsSb thermophotovoltaic diodes. IEEE Transactions on Electron Devices, 53(12), 2879-2888. https://doi.org/10.1109/TED.2006.885087

@article{73f890cde7ea499a85e2ad39d9a2a2d3,

title = "Quaternary InGaAsSb thermophotovoltaic diodes",

abstract = "Inx Ga1-x ASy Sbi1-v thermophotovoltaic (TPV) diodes were grown lattice matched to GaSb substrates by metalorganic vapor phase epitaxy in the bandgap range of EG = 0.5 to 0.6 eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density (PD) of ηTPV = 19.7\% and PD = 0.58 W/cm2, respectively, for a radiator temperature of Tradiotor = 950 °C, diode temperature of Tdlode = 27 °C, and diode bandgap of EG = 0.53 eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters which for 0.53-eV InGaAsSb TPV energy conversion are ηTPV = 28\% and PD = 0.85 W/cm2 at the above operating temperatures. The most severe performance limits are imposed by 1) diode open-circuit voltage (Voc) limits due to intrinsic Auger recombination and 2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode Voc is 15\% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance versus diode architecture indicates that V oc and thus efficiency are limited by extrinsic recombination processes such as through bulk defects.",

keywords = "Diodes, Indium gallium arsenide antimonide, Photovoltaic",

author = "Dashiell, \{Michael W.\} and Beausang, \{John F.\} and Hassan Ehsani and Nichols, \{G. J.\} and Depoy, \{David M.\} and Danielson, \{Lee R.\} and Phil Talamo and Rahner, \{Kevin D.\} and Brown, \{Edward J.\} and Burger, \{Steven R.\} and Fourspring, \{Patrick M.\} and Topper, \{William F.\} and Baldasaro, \{P. F.\} and Wang, \{Christine A.\} and Huang, \{Robin K.\} and Connors, \{Michael K.\} and Turner, \{George W.\} and Shellenbarger, \{Zane A.\} and Gordon Taylor and Jizhong Li and Ramon Martinelli and Dmitry Donetski and Sergei Anikeev and Belenky, \{Gregory L.\} and Serge Luryi",

year = "2006",

month = dec,

doi = "10.1109/TED.2006.885087",

language = "English",

volume = "53",

pages = "2879--2888",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

number = "12",

}

Dashiell, MW, Beausang, JF, Ehsani, H, Nichols, GJ, Depoy, DM, Danielson, LR, Talamo, P, Rahner, KD, Brown, EJ, Burger, SR, Fourspring, PM, Topper, WF, Baldasaro, PF, Wang, CA, Huang, RK, Connors, MK, Turner, GW, Shellenbarger, ZA, Taylor, G, Li, J, Martinelli, R, Donetski, D, Anikeev, S, Belenky, GL & Luryi, S 2006, 'Quaternary InGaAsSb thermophotovoltaic diodes', IEEE Transactions on Electron Devices, vol. 53, no. 12, pp. 2879-2888. https://doi.org/10.1109/TED.2006.885087

TY - JOUR

T1 - Quaternary InGaAsSb thermophotovoltaic diodes

AU - Dashiell, Michael W.

AU - Beausang, John F.

AU - Ehsani, Hassan

AU - Nichols, G. J.

AU - Depoy, David M.

AU - Danielson, Lee R.

AU - Talamo, Phil

AU - Rahner, Kevin D.

AU - Brown, Edward J.

AU - Burger, Steven R.

AU - Fourspring, Patrick M.

AU - Topper, William F.

AU - Baldasaro, P. F.

AU - Wang, Christine A.

AU - Huang, Robin K.

AU - Connors, Michael K.

AU - Turner, George W.

AU - Shellenbarger, Zane A.

AU - Taylor, Gordon

AU - Li, Jizhong

AU - Martinelli, Ramon

AU - Donetski, Dmitry

AU - Anikeev, Sergei

AU - Belenky, Gregory L.

AU - Luryi, Serge

PY - 2006/12

Y1 - 2006/12

N2 - Inx Ga1-x ASy Sbi1-v thermophotovoltaic (TPV) diodes were grown lattice matched to GaSb substrates by metalorganic vapor phase epitaxy in the bandgap range of EG = 0.5 to 0.6 eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density (PD) of ηTPV = 19.7% and PD = 0.58 W/cm2, respectively, for a radiator temperature of Tradiotor = 950 °C, diode temperature of Tdlode = 27 °C, and diode bandgap of EG = 0.53 eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters which for 0.53-eV InGaAsSb TPV energy conversion are ηTPV = 28% and PD = 0.85 W/cm2 at the above operating temperatures. The most severe performance limits are imposed by 1) diode open-circuit voltage (Voc) limits due to intrinsic Auger recombination and 2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode Voc is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance versus diode architecture indicates that V oc and thus efficiency are limited by extrinsic recombination processes such as through bulk defects.

AB - Inx Ga1-x ASy Sbi1-v thermophotovoltaic (TPV) diodes were grown lattice matched to GaSb substrates by metalorganic vapor phase epitaxy in the bandgap range of EG = 0.5 to 0.6 eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density (PD) of ηTPV = 19.7% and PD = 0.58 W/cm2, respectively, for a radiator temperature of Tradiotor = 950 °C, diode temperature of Tdlode = 27 °C, and diode bandgap of EG = 0.53 eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters which for 0.53-eV InGaAsSb TPV energy conversion are ηTPV = 28% and PD = 0.85 W/cm2 at the above operating temperatures. The most severe performance limits are imposed by 1) diode open-circuit voltage (Voc) limits due to intrinsic Auger recombination and 2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode Voc is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance versus diode architecture indicates that V oc and thus efficiency are limited by extrinsic recombination processes such as through bulk defects.

KW - Diodes

KW - Indium gallium arsenide antimonide

KW - Photovoltaic

UR - https://www.scopus.com/pages/publications/33947278948

U2 - 10.1109/TED.2006.885087

DO - 10.1109/TED.2006.885087

M3 - Article

AN - SCOPUS:33947278948

SN - 0018-9383

VL - 53

SP - 2879

EP - 2888

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

ER -

Quaternary InGaAsSb thermophotovoltaic diodes

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